非晶硅太阳电池中吸收层的氢稀释微控作用  

Precise-control on the Absorber Layer in Amorphous Silicon Solar Cells by Hydrogen Dilution

作　　者：盛子纶 史鹏飞 善奇 钟柯 杜浩 李天天 SHENG Zilun;SHI Pengfei;SHAN Qi;ZHONG Ke;DU Hao;LI Tiantian(Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region,School of Physical Science and Technology,Inner Mongolia University,Hohhot 010021,China)

机构地区：[1]内蒙古大学物理科学与技术学院自治区半导体光伏重点实验室,呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2020年第5期525-530,共6页Journal of Inner Mongolia University：Natural Science Edition

基　　金：2017年内蒙古大学高层次人才引进项目(21200-5175162);内蒙古自然科学基金项目(2018MS06027)。

摘　　要：基于等离子体增强化学气相沉积(PECVD)技术制备非晶硅太阳电池,通过微量调节氢稀释(RH),研究其对本征非晶硅吸收层的光学带隙及微结构的影响。实验结果显示当RH由6.5增加到10时,本征非晶硅吸收层的光学带隙由1.796eV提高到1.973eV,电池效率随RH的降低先升高后降低。并在RH=7时达到最大值,此时的本征非晶硅薄膜的光学带隙约为1.836eV,其电池效率达到8.4%(Voc=897.2mV,Jsc=14.86mA/cm2,FF=62.96%)。实验表明RH的提高并不能单调增加电池的效率。通过对微结构的分析发现,这主要是由于RH过低或过高时,其Si-H2键成分比例较高,微结构因子R较大,使得薄膜中缺陷较多所引起电池恶化导致的。The hydrogen amorphous silicon(a-Si:H) films are fabricated by using the plasma enhanced chemical vapor deposition(PECVD) method.The optical band gaps and the micro-structure of i-a-Si:H films were impacted by changing the hydrogen dilution(RH=H2/SiH4).The experimental results show that when the RH increases from 6.5 to 10,the optical band gaps of the i-a-Si:H absorber layer is enhanced from 1.796 eV to 1.973 eV,and the cell efficiency increases at the begining and then decreases with low RH.The best sample achieves at RH=7,the optical band gap of the i-a-Si:H film is 1.836 eV and the cell efficiency reaches 8.4%(Voc=897.2 mV,Jsc=14.86 mA/cm2,FF=62.96%).Through the analysis of the i-a-Si:H films’ microstructure,it indicates that the Si-H2 bond component ratio and the microstructure factor R are very high,which imply that there are more defects in the film to decrease the efficiency of cells.

关 键 词：PECVD 氢稀释 微结构 非晶硅太阳电池 

分 类 号：TK513.3[动力工程及工程热物理—热能工程]