射频反应磁控溅射制备MoS2薄膜结构及光学性能  

Structure and Optical Properties of MoS Thin Films Prepared by RF Reactive Magnetron Sputtering

作　　者：韦贤露 巩晨阳 肖剑荣[1] WEI Xian-lu;GONG Chen-yang;XIAO Jian-rong(College of Science,Guilin University of Technology,Guilin 541004,China)

机构地区：[1]桂林理工大学理学院,广西桂林541004

出　　处：《真空》2020年第5期11-13,共3页Vacuum

基　　金：广西自然科学基金资助,项目号:(2017GXNSFAA198121)。

摘　　要：采用射频反应磁控溅射技术,在不同气压下制备了二硫化钼薄膜。利用扫描电子显微镜、X射线衍射仪、紫外可见光光谱仪等对薄膜的表面形貌、结构和光学性能进行了表征、分析。结果表明:利用射频反应磁控溅射制备的MoS2薄膜,表面平整、颗粒均匀、致密,缺陷少;沉积气压1.2Pa条件下制备的薄膜结晶度最好;薄膜的光学带隙随沉积气压先增大后减小,1.2Pa时光学带隙最大,为1.69e V。薄膜光学带隙的变化是由沉积气压引起薄膜结晶度变化和形成缺陷不同所致。Molybdenum disulfide films were prepared under different pressures by RF reactive magnetron sputtering. The surface morphology, structure and optical properties of the films were characterized by scanning electron microscopy, X-ray diffractometry and UV-Vis spectrometer. The results show that the surface of MoS2 films prepared by RF reactive magnetron sputtering is smooth, uniform and compact with few defects. The films prepared under the deposition pressure of 1.2 Pa shows the best crystallinity. The optical band gap of the films increases first and then decreases with the increase of deposition pressure. The optical band gap is the largest at 1.2 Pa, which is 1.69 eV. The change in the optical band gap of the film is caused by the change in crystallinity of the films and the formation of defects due to the deposition gas pressure.

关 键 词：二硫化钼薄膜 射频反应磁控溅射 沉积气压 晶体结构 光学带隙 

分 类 号：TB43[一般工业技术] TB742