衬底温度对脉冲激光沉积法制备的CuO薄膜性能的影响  

Effect of Substrate Temperature on the Properties of CuO Films Deposited by Pulse Laser Deposition

作　　者：向玉春 XIANG Yu-chun(Xianyang Vocational&Technical College,Xi’an 710600,China)

机构地区：[1]咸阳职业技术学院,陕西西安712000

出　　处：《真空》2020年第5期24-27,共4页Vacuum

摘　　要：通过脉冲激光沉积的方法在玻璃衬底上制备CuO薄膜,并研究了衬底温度对薄膜结构,光学以及电学性能的影响。结果表明:在不同衬底温度下得到的薄膜均为CuO,并且在红外区域,薄膜的透过率均高于65%。温度升高到300℃,具有较高的结晶质量和红外光透过率,薄膜的电学性能也随之变好,出现最低电阻(2.33×10^2Ωcm),较高的载流子浓度5.28×10^161/cm^3。最重要的是在500℃时氧化铜实现了由p型向n型的转变。The CuO thin films were deposited on glass substrates by puls laser deposition and the effects of substrate temperature on the structural, electrical, and optical properties of CuO thin films were investigated. Thin films deposited at different substrate temperature under 8 Pa were all CuO. All CuO thin films exhibited a transmittance higher than 65% in the NIR range. Increasing the substrate temperature to amoderate level(300 in this study)accompanied improved crystalline quality,which yielded the lowest electrical resistivity of 2.33 ×10^2Ωcm with the highest carrier concentration of 5.28×10^161/cm^3 and Hall mobility of 1.26 cm^2/(VS). The most important is that CuO achieved from p-type to n-type at above 500℃. The n-type characteristics need to be improved to make these films useful for applications like transparent p-n junction based devices.

关 键 词：氧化铜 脉冲激光沉积 衬底温度 导电类型 电阻率 

分 类 号：O484[理学—固体物理]