基于通态漏源电压的SiC MOSFET结温估计方法  

Estimating Junction Temperature of SiC MOSFET Based on On-state Drain-source Voltage

作　　者：信金蕾 杜明星[1] 王颖丽[2] XIN Jin-lei;DU Ming-xing;WANG Ying-li(Tianjin University of Technology,Tianjin Key Laboratory of Control Theory&Applications in Complicated System,Tianjin 300384,China;不详)

机构地区：[1]天津理工大学,天津市复杂系统控制理论及应用重点实验室,天津300384 [2]天津渤海职业技术学院,机电工程学院,天津300402

出　　处：《电力电子技术》2020年第10期17-20,共4页Power Electronics

基　　金：国家重点研发计划(2017YFB0102500);天津市教委科研计划(2018KJ162)。

摘　　要：以通态漏源电压为热敏感电参数(TSEP)来估计碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)模块的结温。首先,将SiC MOSFET模块的通态漏源电阻分为芯片通态漏源电阻和封装电路电阻两部分。当漏极电流在导通电路中流过时,相应产生芯片通态漏源电压降和封装电路电压降,从而得到SiC MOSFET模块的通态漏源电压降的测量及计算方法。其次,分析SiC MOSFET模块的芯片通态漏源电阻和封装电路电阻的温度特性,并得到整个模块通态漏源电阻的温度特性。最后,提取SiC MOSFET模块的通态漏源电阻、芯片通态漏源电阻和封装电路电阻,利用芯片通态漏源电压降和封装电路电压降的温度特性关系得到SiC MOSFET模块通态漏源电压解析模型,该方法可以实现实时监测结温的目的。理论和实验结果证明了该方法的可行性。The junction temperature of silicon carbide(SiC)metal-oxide-semiconductor field-effect transistor(MOSFET)module is estimated by using the on-state drain-source voltage as the thermal sensitive electrical parameter(TSEP).First of all,the on-state drain-source resistance of SiC MOSFET module is divided into on-state chip drain-source resistance and package circuit resistance.When the drain current flows in the conduction circuit,the on-state drainsource voltage drop of chip and the voltage drop of package circuit are generated accordingly.Thus,the measurement and calculation method of on-state drain-source voltage drop of SiC MOSFET module are obtained.Secondly,the temperature characteristics of the chip on-state drain-source resistance and the package circuit resistance of the SiC MOSFET module are analyzed,and the temperature characteristics of the whole module on-state drain-source resistance are obtained.Finally,the module on-state drain-source resistance,chip on-state drain-source resistance and package circuit resistance of the SiC MOSFET module are extracted,and the analytical model of the on-state drainsource voltage of the SiC MOSFET module is obtained by using the temperature characteristics of the chip on-state drain-source voltage drop and package circuit voltage drop.This method can realize the purpose of monitoring the junction temperature in real-time.Theoretical and experimental results show that the method is feasible.

关 键 词：金属氧化物半导体场效应晶体管 结温 通态漏源电压 

分 类 号：TN32[电子电信—物理电子学]