抑制4H-SiC功率器件双极型退化的复合提高层设计  

Design a Recombination-enhancing Layer for Preventing 4H-SiC Power Device Bipolar Degradation

作　　者：杨安丽 温正欣 宋华平 张新河 YANG An-li;WEN Zheng-xin;SONG Hua-ping;Zhang Xin-he(Shenzhen Institute of Wide-bandgap Semiconductors,Shenzhen 518110,China;不详)

机构地区：[1]深圳第三代半导体研究院,功率器件所,广东深圳518110 [2]松山湖材料实验室,SiC及相关材料团队,广东东莞523808

出　　处：《电力电子技术》2020年第10期75-76,79,共3页Power Electronics

基　　金：广东省第三代半导体技术创新中心(2019B090-918006);广东省重点领域研发计划(2019B010127001)。

摘　　要："双极型退化"是目前影响4H-碳化硅(SiC)双极型器件稳定工作的重要问题。针对此现象,以万伏级的超高压PiN二极管为例,详细介绍在衬底与外延层之间如何设计合适的"复合提高层"以抑制双极型退化。研究了器件工作电流密度和"复合提高层"少子寿命对设计"复合提高层"的影响。结果表明,在一定的工作电流密度下,"复合提高层"少子寿命越短,所需"复合提高层"厚度越薄。"Bipolar degradation"is an important problem affecting the stability of 4 H-silicon carbide(SiC)bipolar devices.A 10 kV ultra-high voltage PiN diode is taken as an example,and how to design an appropriate"recombinationenhancing layer"between a substrate and an epitaxial layer to prevent"bipolar degradation"is introducd in detail.The effects of current injection density and minority carrier lifetime of the designed layer on the designed"recombination-enhancing layer"are separately studied.The results show that under a certain working current density,the shorter the minority carrier lifetime of the"recombination-enhancing layer",the thinner the designed layer thickness is required.

关 键 词：碳化硅 功率器件 双极型退化 复合提高层 

分 类 号：TQ163.4[化学工程—高温制品工业]