10μm小间距红外探测器的铟柱生长研究  

Indium bump evaporation research on IR detector of 10μm pixel distance

作　　者：张鹏[1] 李乾 ZHANG Peng;LI Qian(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2020年第10期1218-1222,共5页Laser & Infrared

摘　　要：在10μm小间距的条件下进行红外探测器的铟柱生长工艺,会得到铟柱高度不足的结果;本文针对这种情况,开展了小间距的铟柱生长研究,比较了在不同基片温度和蒸发速率条件下的铟柱高度,并分析了试验结果,得到了最优的生长工艺条件。The growth process of indium column in infrared detector with small spacing of 10um will result in the indium column with insufficient height.In view of this situation,the indium column with small spacing was studied in this paper,and the indium column height under different substrate temperature and evaporation rate was compared,and the test results were analyzed to obtain the optimal growth process conditions.

关 键 词：红外探测器 铟柱 小间距 

分 类 号：TN215[电子电信—物理电子学]