低噪声放大器设计  

Design of Low Noise Amplifier

作　　者：李铮[1] LI Zheng(School of Information Technology,Huangshan University,Huangshan 245041,China)

机构地区：[1]黄山学院信息工程学院,安徽黄山245041

出　　处：《黄山学院学报》2020年第5期32-34,共3页Journal of Huangshan University

摘　　要：设计并分析了一种2.4GHz小信号的CMOS低噪声放大器(LNA),其源漏极间沟道长度为0.18m,在给定功耗下选择晶体管相关参数,利用ADS(Advanced design system)软件对所设计的电路进行仿真,得到2.86dB的噪声系数、-7.8dB的反射系数及28.18dB的增益,仿真结果显示,设计的主要参数均运行在允许范围内。此外,还探讨了各元器件参数对所设计电路的噪声的影响程度。A 2.4GHz small-signal CMOS Low Noise Amplifier(LNA)is designed and analyzed.The channel length between source and drain is 0.18m.Under a given power consumption,the transistor-related parameters are selected and the ADS(Advanced Design System)software is used to simulate the designed circuit.The results are as follows:the noise figure is 2.86dB.The voltage gain is 28.18dB and the reflection coefficient is-7.8dB.The simulation results show that the main parameters of the design are all operating within the allowable range.In addition,the influence of various component parameters on the noise of the designed circuit is also discussed.

关 键 词：CMOS 低噪声放大器 射频 共源共栅 

分 类 号：TN432[电子电信—微电子学与固体电子学]