基于毫米波GaN固态功放的预失真线性化器  

Pre-distortion Linearizer for Millimeter-Wave GaN Solid State Power Amplifiers

作　　者：张能波 李凯[1] ZHANG Neng-bo;LI Kai(The 10th Research Institute of China Electronics Technology Group Corporation,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第十研究所,成都610036

出　　处：《微波学报》2020年第5期66-69,共4页Journal of Microwaves

摘　　要：研制了一款用于毫米波GaN固态功放的预失真线性化器。采用预失真线性化技术,通过调整I、Q两路正交电路(I路由线性可调衰减器构成,Q路由二极管非线性电路构成)的外加偏置电压,可以实现预失真线性化器的幅度和相位分别可调。将该线性化器与工作频率为30 GHz的毫米波GaN固态功放级联测试,双音激励信号频率间隔为5 MHz,三阶互调(IMD3)可以改善约10 dB。A predistortion linearizer for millimeter GaN solid state power amplifier is proposed in this paper.Using predistortion linearizer technology,through IQ orthogonal circuits,which the I routing is a linear adjustable attenuator,and the Q routing is diode nonlinear circuit,by adjusting the bias voltage of the IQ circuit,the gain and phase characteristics can be adjusted respectively.By applying this linearizer to a 30 GHz-band GaN solid state power amplifier,and using a two-tone prompting signal with 5 MHz spacing,the improvement of three order intermodulation(IMD3)has been achieved 10 dB.

关 键 词：毫米波 GAN 三阶互调 预失真 线性化器 

分 类 号：TN386[电子电信—物理电子学]