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作 者:张浩[1] 汪璨星 Zhang Hao;Wang Canxing(Nanjing Research Institute of Electronics Technology,Nanjing 210039,China)
出 处:《半导体技术》2020年第10期754-759,共6页Semiconductor Technology
摘 要:针对Ka波段单片收发(T/R)集成电路对发射大功率和高隔离度的需求,分析了传统单刀双掷(SPDT)开关中并联、串联晶体管尺寸对插入损耗、隔离度和线性度的影响,设计了一款非对称的毫米波单刀双掷开关,通过去除发射通道上的并联支路,提高发射通道的1 dB压缩点输出功率。同时,通过串联和并联电感与晶体管寄生电容并联谐振的方式,提高发射和接收通道的隔离度。该开关采用0.13μm SiGe BiCMOS工艺实现,测试结果表明,在25~40 GHz频率范围内,接收模式下,插入损耗S31小于4 dB,回波损耗S11和S33分别小于-10.8 dB和-11.8 dB;发射模式下,插入损耗S21小于1.8 dB,1 dB压缩点输出功率大于18.2 dBm,隔离度S32大于19 dB,回波损耗S11和S22分别小于-14.6 dB和-15.9 dB。该Ka波段非对称单刀双掷开关芯片的核心面积仅0.21 mm2。To meet the requirements of Ka-band monolithic transmit-receive(T/R) integrated circuit for transmitting high power and high isolation, the influences of the sizes of parallel and series transistors of traditional single-pole double-throw(SPDT) switch on insertion loss, isolation and linearity were analyzed. An asymmetric millimeter wave SPDT switch was designed, and the 1 dB compression point output power of the transmitting channel was increased by removing the parallel branch on the transmitting channel. At the same time, the isolations of transmitting and receiving channels were improved by the way of parallel or series inductor resonance with the parasitic capacitance. The SPDT switch was realized by 0.13 μm SiGe BiCMOS process. The test results show that, in range of 25-40 GHz, the insertion loss(S31) is less than 4 dB, and the return loss(S11 and S33) is less than-10.8 dB and-11.8 dB respectively in the receiving mode;the insertion loss(S21)is less than 1.8 dB, the 1 dB compression point input power is more than 18.2 dBm, the isolation(S32)is more than 19 dB, and the return loss(S11 and S22)is less than-14.6 dB and-15.9 dB respectively in the transmission mode. The core circuit area of the Ka-band asymmetric SPDT switch chip is only 0.21 mm2.
关 键 词:单刀双掷(SPDT)开关 非对称 KA波段 锗硅(SiGe) BICMOS工艺
分 类 号:TN433[电子电信—微电子学与固体电子学]
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