氮气体积分数对ITO上制备InN薄膜物理特性的影响  

Effects of Nitrogen Volume Fraction on Physical Properties of InN Thin Films Prepared on ITO

作　　者：张子旭 王婉君 樊义棒 高薇 耿柏琳 王辉 赵洋 Zhang Zixu;Wang Wanjun;Fan Yibang;Gao Wei;Geng Bolin;Wang Hui;Zhao Yang(Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications,School of Physics and Engineering,Henan University of Science and Technology,Luoyang 471023,China)

机构地区：[1]河南科技大学物理工程学院河南省光电储能材料与应用重点实验室,河南洛阳471023

出　　处：《半导体技术》2020年第10期764-769,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61674052,11404097);河南省高等学校重点科研项目(20A140012);河南省高校省级大学生研究训练计划(SRTP)项目(S201910464024);河南科技大学大学生研究训练计划(SRTP)项目(2019208);河南科技大学物理与工程学院大学生研究训练计划(SRTP)项目(wlsrtp201910)。

摘　　要：采用磁控溅射法在氧化铟锡(ITO)导电玻璃衬底上制备InN薄膜,研究了氮气体积分数对InN薄膜晶体结构、表面形貌和光电特性的影响。X射线衍射测试结果表明,所制备的InN薄膜均为六方纤锌矿结构,且随着氮气体积分数的增加,InN薄膜由沿(101)面择优生长逐渐变为沿(002)面择优生长。原子力显微镜结果表明,随着氮气体积分数的增加,InN薄膜表面粗糙度逐渐减小。此外,通过光致发光谱和光学吸收谱测得氮气体积分数为100%时制备的InN薄膜禁带宽度分别为1.45 eV和1.47 eV。霍尔测试结果表明,InN薄膜均呈现n型导电特性,且随着氮气体积分数的增加,其迁移率由4.57 cm2·V-1·s-1增加至12.2 cm2·V-1·s-1,载流子浓度由8.498×1021 cm-3减小至2.041×1021 cm-3,电阻率由16.08×10-4Ω·cm减小至2.118×10-4Ω·cm。该研究为InN在高效太阳电池及发光器件领域的应用提供有益的参考。InN thin films were prepared on indium tin oxide(ITO)conductive glass substrates by using magnetron sputtering technology.The effects of nitrogen volume fraction on the crystal structure,surface morphology and photoelectric properties of InN thin films were investigated.The X-ray diffraction test results show that all InN thin films exhibit hexagonal wurtzite structure.With the increase of nitrogen volume fraction,the preferred growth for as-grown InN thin films gradually changed from(101)plane to(002)plane.The atomic force microscope results show that the surface roughness of InN thin films decreases gradually with the increase of nitrogen volume fraction.In addition,the band gap values of InN thin films measured by photoluminescence and optical absorption spectra were 1.45 eV and 1.47 eV,respectively,under the nitrogen volume fraction of 100%.The Hall test results show that all InN thin films exhibit n-type conductivity.Moreover,with the increase of nitrogen volume fraction,the mobility of InN thin films is increased from 4.57 cm2·V-1·s-1 to 12.2 cm2·V-1·s-1.The carrier concentration decreasesfrom 8.498×1021 cm-3 to 2.041×1021 cm-3 and the resistivity decreases from 16.08×10-4Ω·cm to 2.118×10-4Ω·cm.This research provides a useful guidance for the application of InN thin films in the fields of high efficiency solar cells and light-emitting devices.

关 键 词：磁控溅射 INN薄膜 氮气体积分数 氧化铟锡(ITO) 物理特性 

分 类 号：TN304.2[电子电信—物理电子学]