高厚度均匀性晶圆双面电镀金技术  

Double-Sided Gold Electroplating Technology for Wafers with High Thickness Uniformity

作　　者：陈苏伟 解坤宪 曹秀芳[1] 张伟锋[1] 王迪 杜婷婷 郭育澎 Chen Suwei;Xie Kunxian;Cao Xiufang;Zhang Weifeng;Wang Di;Du Tingting;Guo Yupeng(The 45th Research Institute,CETC,Beijing 100176,China)

机构地区：[1]中国电子科技集团公司第四十五研究所,北京100176

出　　处：《半导体技术》2020年第10期796-800,共5页Semiconductor Technology

基　　金：装备预研中国电科联合基金资助项目(6141B08120202)。

摘　　要：分析了晶圆双面电镀金工艺过程中影响镀层厚度均匀性的因素,通过单因素对比实验,研究阴极触点数量、电场屏蔽板开孔尺寸、旋转桨与晶圆间距和旋转桨转速等因素对镀金层厚度均匀性的影响及其影响机理。当阴极触点数量为12个,电场屏蔽板开孔尺寸为60 mm,旋转桨与晶圆的间距为3 mm,旋转桨转速为180 r/min时,可得到最优的4英寸(1英寸=2.54 mm)晶圆双面电镀金厚度均匀性。当电镀工艺目标镀层厚度为4μm时,晶圆双面镀层厚度均匀性可控制在5%以内。实验结果表明,晶圆双面挂镀设备即可满足晶圆双面同时电镀,也可满足高端芯片封装对镀层厚度均匀性的要求。The factors affecting the uniformity of coating thickness of wafer during the double-sided gold electroplating process were analyzed. The single factor comparative experiments were carried out to study the factors affecting the coating uniformity, including the number of cathode contacts, the dimension of the hole in the electric field baffle, the distance between rotating paddle and wafer, and the rotating speed of rotating paddle. The influence mechanisms of the parameters were also analyzed. When the cathode contacts are 12, the dimension of the hole in the electric field baffle is 60 mm, the distance between rotating paddle and wafer is 3 mm, and the rotating speed of rotating paddle is 180 r/min, the optimum uniformity of the double-sided coating thickness of the 4-inch(1 inch=2.54 cm) wafer is obtained. When the coating thickness is 4 μm during the electroplating process, the uniformity of the double-sided coating thickness of the wafer can be controlled within 5%.The experiment results show that the double-sided wafer hanging electroplating equipment can meet the requirements of both the double-sided wafer electroplating at the same time and the uniformity of coating thickness for the high-end chip packaging.

关 键 词：双面电镀 镀层均匀性 电场屏蔽板 旋转桨 挂镀 

分 类 号：TN305[电子电信—物理电子学]