在蓝宝石图形衬底上外延高性能LED  

Realization of High-performance LEDs on Patterned Sapphire Substrates

作　　者：乔良 杨海艳 张诗娟 陆羽 QIAO Liang;YANG Haiyang;ZHANG Shijuan;LU Yu(School of Computer, North China Institute of Science and Technology,Sanhe 065201, China;Dongguan South Semiconductor Technology Co. Ltd,Dongguan 523000, China;School of Mathematics and Physics, AnHui University of Technology,Maanshan 243002, China)

机构地区：[1]华北科技学院计算机学院,河北三河065201 [2]东莞南方半导体科技有限公司,广东东莞523000 [3]安徽工业大学数理科学与工程学院,安徽马鞍山243002

出　　处：《照明工程学报》2020年第5期82-84,共3页China Illuminating Engineering Journal

基　　金：廊坊市科学技术研究与发展计划资助项目(项目编号:2019011032)。

摘　　要：在较大尺寸的蓝宝石衬底上生长氮化镓(GaN)基发光二极管(light emitting diode,LED)外延往往会发生较为明显的翘曲状况,这会导致整个外延片发光一致性降低。本文通过优化非故意掺杂氮化镓层的生长参数,调节了外延层中的应力,该外延层的晶体质量得到改善。实验结果表明,优化生长条件后的LED样品,翘曲程度明显降低,发光一致性和均匀性得到提升。Wafer bowing occurs frequently when GaN based light emitting diodes(LEDs)were grown on large sapphire substrates.And it will lead to bad uniformity and consistency of light.In this paper,the growth conditions of undoped GaN layer was optimized which changed the status of stress in the epitaxial structure.And so the quality of epitaxy was improved.It was found that wafer bowing on the optimized LED sample was reduced.The uniformity and consistency of light were better.

关 键 词：蓝宝石衬底 发光二极管 翘曲 

分 类 号：TN312+.8[电子电信—物理电子学]