12.5μm碲镉汞探测器工作温度对输出电平的影响  

Effect of Operating Temperature on Output Level of 12.5μm HgCdTe Detector

作　　者：王亮[1] 刘建伟[1] 吴卿[1] WANG Liang;LIU Jian-wei;WU Qing(North China Research Institute of Electro-Optics, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2020年第9期20-24,共5页Infrared

摘　　要：12.5μm碲镉汞探测器的输出电平对工作温度非常敏感,因此需要对其温度敏感度进行研究。试验中,通过调节探测器的工作温度来采集其输出电平,并对数据进行分析。结果表明,工作波长和暗电流随温度变化是导致输出电平变化的主要因素;12.5μm碲镉汞探测器的最佳工作温度在60 K附近。该方法操作简单,无需使用复杂的操作设备。大部分红外实验室均可满足此试验要求。The output level of 12.5 μm HgCdTe detector is very sensitive to the working temperature, so it is necessary to study the temperature sensitivity. When doing experiments, adjust the working temperature of the detector, collect its output level and analyze the data. It can be seen from the analysis results that the variation of working wavelength and dark current with temperature is the main factor leading to the change of output level. The best working temperature of the 12.5 μm HgCdTe detector is around 60 K. The experimental method is simple to operate and does not require complicated operating equipment. Most infrared laboratories can meet the experimental requirements.

关 键 词：碲镉汞 截止波长 暗电流 工作温度 

分 类 号：TN213[电子电信—物理电子学]