基于帕德逼近的射频功率管导纳域行为模型研究  

Research on Admittance Domain Behavior Model of RF Power Transistor Based on PadéApproximation

作　　者：蔡佳林 刘军[1] CAI Jialin;LIU Jun(Key Laboratory of RF Circuit and System,Ministry of Education,Hangzhou Dianzi Universily,Hangzhou,310018,CHN;Science and Technology on Monolithic Integrated Circuils and Modules Laboratory,Nanjing,210016,CHN)

机构地区：[1]杭州电子科技大学电子信息学院.射频与电路教育部重点实验室,杭州310018 [2]微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2020年第5期328-332,共5页Research & Progress of SSE

基　　金：微波毫米波单片集成和模块电路重点实验室基金项目(6142803180206);国家自然科学基金资助项目(61701147,61971170);毫米波国家重点实验室开放基金项目(K202011)。

摘　　要：提出了一种基于帕德逼近的射频功率管非线性导纳域行为模型。所提出的导纳域的帕德行为模型与基于行波域的帕德模型具有相似的概念。与现有的基于多项式公式的大信号导纳域Y参数模型相比,基于帕德逼近的Y参数模型采用有理函数进行建模,该方法比基于多项式函数的建模方法具有更多种类的建模可能性,模型精度也更高。对10 W氮化镓器件的本征电路模型进行了验证性试验,在不同负载条件和工作频率下的预测结果表明,该模型具有良好的预测性能。与多项式模型相比,基于有理函数的模型在预测精度上显示出优势。A nonlinear,admittance domain,behavioral model based on Padéapproximation is presented.The proposed admittance Padémodel is similar in concept to the Padémodel in traveling wave domain.Compared with the existing large signal Y-parameter model,which is all based on polynomial formulation,the Padéapproximation based Y-parameter model uses a rational function instead.The basic theory of the proposed Padémodel is provided.The proposed Padéapproach increases the available modelling space beyond that available to the poly-harmonic distortion method,and provides more accurate prediction at the same time.Validation test of an intrinsic circuit model from a10 W GaN device is given,the prediction results of the proposed model at various load conditions and operating frequencies show good prediction performance.Compared with the polynomial topology,the rational function based model shows advantage in prediction accuracy.

关 键 词：导纳域 大信号行为模型 帕德逼近 

分 类 号：TN386.1[电子电信—物理电子学] TN432