异质结界面结构在石墨烯负阻器件中的作用  

Role of Heterojunction Interface Structure in Graphene Negative Resistance Device

作　　者：汪威 黄启俊[1] 何进[1] 王豪[1] 常胜[1] WANG Wei;HUANG Qijun;HE Jin;WANG Hao;CHANG Sheng(School of Physics and Technology,Wuhan Universily,Wuhan,430072,CHN)

机构地区：[1]武汉大学物理科学与技术学院,武汉430072

出　　处：《固体电子学研究与进展》2020年第5期333-336,348,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61874079,61574102,61774113)。

摘　　要：基于石墨烯纳米带异质结设计新型负微分电阻(Negative differential resiatance,NDR)器件的思路,利用不同宽度尺寸石墨烯纳米带的组合来搭建双势垒量子阱,构造了具有优良NDR性能的新型器件。通过一系列的数值计算仿真,揭示了不同异质结界面结构对负微分电阻器件的电流强度和电流峰值的影响机制,并将其归因为"奇数"和"偶数"两种界面连接方式。对于"奇数"连接方式的石墨烯异质结,电子结构没有表现出局域性,而对于"偶数"连接形式的石墨烯异质结,电子结构则表现出很强的局域性,导致对应器件的沟道电流强度较低。Based on the idea of designing new negative differential resistance devices with graphene nanoribbon heterojunctions,it uses a combination of different width dimensions of the graphene nanoribbons to build double barrier quantum well structure with excellent properties NDR.Through a series of numerical calculation simulations,the mechanism of the influence of different heterojunction interface structures on the current intensity and current peak value of the negative differential resistance device is revealed,and it is attributed to the″odd″and″even″interface connection methods.For the″odd″graphene heterojunction,the electronic structure does not show localization,while for the″even″graphene heterojunction,the electronic structure shows a strong localization,and the channel current intensity of the corresponding device is low.

关 键 词：异质结界面结构 负阻器件 量子阱 布洛赫态 

分 类 号：TN386[电子电信—物理电子学]