LDD注入工艺对40nm中压NMOS器件HCI-GIDL效应的优化  

Optimization of 40nm MV NMOS Device with LDD Injection Process for HCI-GIDL Effects

作　　者：闫翼辰 蔡小五 魏兰英 蔡巧明 曹杨 杜林 YAN Yichen;CAI Xiaowu;WEI Lanying;CAI Qiaoming;CAO Yang;DU Lin(Univ.of Chinese Academy of Sciences,Beijing 100049,P.R.China;SMIC Integr.Circ.Manufact.Co.,Ltd.(Beijing),Beijing 100176,P.R.China;Anhui Jiyuan Inspection and Testing Technol.Co.,Ltd.,Hefei 230088,P.R.China)

机构地区：[1]中国科学院大学,北京100049 [2]中芯国际集成电路制造有限公司(北京),北京100176 [3]安徽继远检验检测技术有限公司,合肥230088

出　　处：《微电子学》2020年第5期738-742,共5页Microelectronics

基　　金：国家重点研究发展计划项目(2016YFB0901804)。

摘　　要：基于40 nm CMOS工艺,研究了8 V MV NMOS器件的HCI-GIDL效应的优化。分析了增大LDD注入倾角、二次LDD注入由P注入变为As注入两种措施对电学特性的影响。测试结果表明,两种措施均对器件的衬底电流、关态泄漏电流产生较好效果。利用TCAD工具,模拟了LDD注入工艺的优化对掺杂形貌、电场分布和碰撞电离强度的影响。分析了HCI-GIDL效应得以优化的物理机制。The balance optimization of HCI-GIDL effects of 8 V MV NMOS devices based on 40 nm CMOS technology were studied.The influence of increasing LDD injection tilt angle and changing the second-step LDD injection atom from P to As on the electrical characteristics of the device were analyzed.The test results showed that both measures had good effect on the substrate current and off-state leakage current.The effects of LDD injection process optimization on doping profile,electric field distribution and impact ionization intensity were simulated with TCAD tool.The physical mechanism of optimization of the HCI-GIDL effects were analyzed.

关 键 词：HCI-GIDL效应 NMOS器件 LDD注入 

分 类 号：TN386[电子电信—物理电子学]