溅射硒化物靶与金属单质靶制备Cu2ZnSnSe4薄膜及电池的比较研究  

Comparative Study of Cu2ZnSnSe4 Thin Films Solar Cells Fabricated by Sputtering Selenide Targets and Metal Element Targets

作　　者：李祥 王书荣[1,2] 廖华[1] 杨帅[1] 李新毓 王亭保 李晶金 李秋莲 刘信[1] LI Xiang;WANG Shurong;LIAO Hua;YANG Shuai;LI Xinyu;WANG Tingbao;LI Jingjin;LI Qiulian;LIU Xin(Key Laboratory of Rural Energy Engineering in Yunnan Province, Yunnan Normal University, Kunming 650500, China;Yunnan Key Laboratory of Opto-electronic Information Technology, Yunnan Normal University, Kunming 650500, China)

机构地区：[1]云南师范大学,云南省农村能源工程重点实验室,昆明650500 [2]云南师范大学,云南省光电技术重点实验室,昆明650500

出　　处：《人工晶体学报》2020年第10期1807-1813,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61941401,U1902218)。

摘　　要：采用磁控溅射SnSe-ZnSe-Cu硒化物靶和Sn-Zn-Cu金属单质靶的方法制备两种Cu2ZnSnSe4(CZTSe)预制层,并将两种预制层采用相同的硒化工艺制备出CZTSe薄膜吸收层。分别采用XRD、Raman、SEM、EDS等分析了薄膜的晶体结构、相的纯度、表面及截面形貌和元素组分,结果发现采用硒化物靶制备的CZTSe吸收层薄膜更为平整致密且无明显孔洞。同时采用Hall测试和J-V测试对太阳电池薄膜的电学性质进行了表征,结果表明硒化物靶制备的CZTSe太阳电池的电流密度以及光电转化效率要高于金属单质靶,金属单质靶制备的CZTSe薄膜电池的开路电压为356 mV,短路电流密度为20.61 mA/cm2,光电转换效率为2.18%,而硒化物靶制备的CZTSe薄膜电池的开路电压为354 mV,短路电流密度为28.41 mA/cm2,光电转换效率为3.33%。Two kinds of Cu2ZnSnSe4(CZTSe)precursor layers were prepared by magnetron sputtering SnSe-ZnSe-Cu targets and metal Sn-Zn-Cu targets,respectively.The CZTSe absorber layers based on two kinds of precursors were prepared by using the same selenization process.The crystallization,phase purity,surface and section morphology and elemental constituents of CZTSe film were investigated by X-ray diffraction(XRD),Raman microscopy(Raman),scanning electron microscope(SEM)and energy dispersive spectrometer(EDS),respectively.It was found that the CZTSe adsorption layer film with more flat and dense surface as well as without any obvious holes were obtained by sputtering selenide targets.The electrical properties of solar cell films were characterized by Hall system and J-V testing.The results show that the current density and conversion efficiency of the CZTSe solar cells based on selenide targets are higher than that of CZTSe solar cells from metal element targets.The CZTSe thin film solar cells based on metal element targets obtain a photoelectric conversion efficiency of 2.18%with an open circuit voltage of 356 mV and a short circuit current density of 20.61 mA/cm2,while the photoelectric conversion efficiency of CZTSe thin film solar cells prepared by selenide targets is 3.33%with an open circuit voltage of 354 mV and a short circuit current density of 28.41 mA/cm2.

关 键 词：CZTSe薄膜 太阳电池 磁控溅射 硒化 光电转换效率 

分 类 号：TM914.4+2[电气工程—电力电子与电力传动]