一种新型W波段基片集成波导带通滤波器设计  

Design of a novel W-band SIW bandpass filter

作　　者：王文 邢小明[1] 夏侯海[1] Wang Wen;Xing Xiaoming;Xia Houhai(Nanjing Research Institute of Electronics Technology,Nanjing 210039,China)

机构地区：[1]南京电子技术研究所,南京210039

出　　处：《电子测量技术》2020年第17期30-34,共5页Electronic Measurement Technology

摘　　要：针对传统W波段带通滤波器尺寸大、重量大以及集成难度高的问题,基于微电子机械系统(MEMS)硅微加工技术,提出了一种结构更为紧凑的新型基片集成波导(SIW)带通滤波器。该滤波器具有3层高阻硅结构,由4个SIW谐振腔和一段半波长SIW传输线构成,可获得四阶切比雪夫响应和1对传输零点。同时,采用共面波导(CPW)端口更易于电路集成。为验证设计方案的有效性与性能的优越性,通过对比实验的方法,同时设计另一种五阶直接耦合滤波器进行滤波选择性上的比较。最终得到该新型滤波器的电磁仿真结果为中心频率为93 GHz,相对带宽为6.1%,带外抑制大于35 dB,矩形系数为1.57。通过实验验证,该滤波器具有良好的滤波性能,选择性更高,同时结构简单紧凑、尺寸小、易于集成。To solve the problems of large size,heavy weight and high integration difficulty of traditional W-band bandpass filter,a more compact SIW bandpass filter is presented,which using MEMS silicon micromachining technology.This filter has a three-layer structure of high-resistance silicon,which is composed of four SIW resonators and a half-wavelength SIW transmission line,and can obtain a fourth-order Chebyshev response and a pair of transmission zeros.Besides,the use of CPW ports is easier for circuit integration.To validate the effectiveness of the proposed design and the superiority of the performance,another five-pole direct-coupled filter is designed to compare the selectivity by the experimental methods of comparing.Finally,EM simulation results of the proposed filter were obtained the center frequency is 93 GHz,3-dB bandwidth is 6.1%,the out-of-band suppression bigger than 35 dB and the rectangular coefficient is 1.57.It has been verified by experiments that the filter has good performance and higher selectivity.At the same time,the structure is simple and compact,with small size and easy integration.

关 键 词：带通滤波器 基片集成波导 交叉耦合 硅基 微电子机械系统 

分 类 号：TN713[电子电信—电路与系统]