射频离子辅助沉积对ITO薄膜光电性能的影响  

Effect of RF Ion-assisted Deposition on Photoelectric Properties of ITO Films

作　　者：刘文成 刘冬梅[1] 付秀华[1] 张静[1] LIU Wen-cheng;LIU Dong-mei;FU Xiu-hua;ZHANG Jing(School of Optoelectronic Engineering,Changchun University of Science and Technology,Changchun 130022)

机构地区：[1]长春理工大学光电工程学院,长春130022

出　　处：《长春理工大学学报（自然科学版）》2020年第5期83-88,共6页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：吉林省重大科技攻关专项(20190302095GX)。

摘　　要：为了制备光电性能高的氧化铟锡(ITO)薄膜,利用电子束和射频离子源辅助沉积技术,在玻璃基底上制备了ITO透明半导体薄膜,从ITO薄膜的半导体物理学理论出发,研究分析了未使用离子源辅助沉积ITO薄膜的光电性能,以及使用离子源辅助沉积之后,ITO薄膜厚度、离子源气体比例、离子源能量强度对ITO薄膜光学性能和电学性能的影响。最终以电压1200 V、氧气/氩气比例3∶1的离子源工艺,制备了厚度为20 nm,电阻率为5.34×10-3Ω·cm,透过率为91.42%,光电性能良好的ITO透明导电膜。In order to prepare an indium tin oxide(ITO)film with high photoelectric performance,an ITO transparent semiconductor film was prepared on a glass substrate by electron beam evaporation and RF ion source assisted deposition.Based on the semiconductor physics theory of ITO film,the research was carried out.The photoelectric properties of the ITO film deposited by the ion source were not used;and the effects of the thickness of the ITO film,the proportion of the ion source gas,and the energy intensity of the ion source on the optical properties and electrical properties of the ITO film were investigated.An ITO transparent conductive film with a thickness of 20 nm and good photoelectric properties was prepared by an ion source process with a voltage of 1200 V and an oxygen/argon gas ratio of 3∶1.The final transmittance of the film was 91.42%,and the resistivity was 5.34×10-3Ω·cm.

关 键 词：光学薄膜 ITO薄膜 电子束蒸发 离子源辅助沉积 

分 类 号：O484[理学—固体物理]