基材偏压对中频磁控溅射氮化铬薄膜微观结构和性能的影响  

Effect of substrate bias voltage on microstructure and properties of chromium nitride film prepared by midfrequency magnetron sputtering

作　　者：万松峰[1] WAN Songfeng(Department of Mechanical and Electrical Engineering Dongguan Polytechnic,Dongguan 523808,China)

机构地区：[1]东莞职业技术学院机电工程系,广东东莞523808

出　　处：《电镀与涂饰》2020年第21期1486-1490,共5页Electroplating & Finishing

基　　金：2020广东省科技创新战略专项资金(pdjh2020b1267);广东省教育厅2017年度特色创新类项目(2017GGXJK094);2018东莞市社会科技发展项目(20185071561262)。

摘　　要：采用中频磁控溅射系统在手机不锈钢装饰件上沉积氮化铬薄膜,利用X射线衍射、扫描电镜、纳米压痕仪和球盘摩擦仪考察了基材偏压对薄膜微观结构、沉积速率、显微硬度和摩擦性能的影响。结果表明:氮化铬薄膜主要为面心立方晶相结构,存在(200)晶面择优取向;薄膜表面晶粒呈颗粒状且均匀致密地沉积在基材上,截面为柱状晶结构且柱状晶之间结合紧密;沉积速率随基材偏压的增大而增大;在基材偏压为−100 V时,薄膜显微硬度最高(为1207 HV),摩擦因数最小(为0.31)。CrN thin films were deposited on decorative stainless steel parts of cellphones by mid-frequency magnetron sputtering.The effect of substrate bias voltage on microstructure,deposition rate,microhardness,and friction factor of the thin films were studied using X-ray diffractometer,scanning electron microscope,nanoindenter,and ball-on-disk tribometer.The results showed that the CrN thin films mainly exhibited face-centered cubic crystal phase structure with a preferential orientation of(200)crystal plane.The grains on the surfaces of the thin films were granular,and deposited uniformly and compactly on the substrate.The cross-sections of the thin films featured a tightly bonded columnar crystal structure.The deposition rate was increased with the increasing of substrate bias voltage.The thin films prepared at a substrate bias of−100 V had the highest hardness(1207 HV)and the lowest friction factor(0.31).

关 键 词：氮化铬 中频磁控溅射 基材偏压 微观结构 显微硬度 摩擦学 

分 类 号：TG13[一般工业技术—材料科学与工程] TG174.44[金属学及工艺—合金]