非易失性阻变存储器总剂量效应试验研究  

Experimental study on the total ionizing dose effects of nonvolatile RRAM

作　　者：常思远 杨生胜[1] 文轩[1] 安恒[1] 王鷁[1] 曹洲[1] 银鸿 CHANG Siyuan;YANG Shengsheng;WEN Xuan;AN Heng;WANG Yi;CAO Zhou;YIN Hong(National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment,Lanzhou Institute of Physics,Lanzhou 730000,China)

机构地区：[1]兰州空间技术物理研究所空间环境材料行为与评价重点实验室,兰州730000

出　　处：《核技术》2020年第12期65-71,共7页Nuclear Techniques

基　　金：空间环境材料行为及评价技术国防科技重点实验室资助。

摘　　要：存储器作为航天器电子系统不可或缺的一部分,在航天应用中需要有良好的抗辐射能力。阻变存储器(Resistive Random Access Memory,RRAM)是一种新型的非易失性半导体存储器,性能优良,但对其辐射效应的研究较少。本文侧重于在理论分析的基础上,结合60Coγ射线辐照试验得到的结果对RRAM的总剂量效应失效机理进行分析研究。首先,通过对RRAM中单个MOS(Metal-Oxide-Semiconductor)管总剂量效应的分析,提出器件失效机理的两个假设,然后对写入不同初始数据的器件进行有针对性的辐照试验,对不同累积剂量时存储器的数据读取功能和静态工作电流进行测量,统计得到的结果验证了假设的正确性。研究结果表明:RRAM辐照敏感单元为存储阵列,RRAM读取功能失效是由于MOS管在辐照下产生漏电流,导致读电路的电平输出状态改变而引起的。[Background]As an indispensable part of spacecraft electronic systems,memory device is required to have good radiation resistance in aerospace applications.Resistive random access memory(RRAM)is a new type of non-volatile semiconductor memory with excellent performance,but little attention has been paid on its radiation effect research.[Purpose]This study aims to investigate the failure mechanism of RRAM total ionizing dose effects.[Methods]First of all,on the basis of theoretical analysis,combined with the results of 60Coγirradiation test.The total ionizing dose effect failure mechanism of a single metal-oxide-semiconductor field-effect transistor(MOSFET)in RRAM was analyzed.Two hypotheses on the failure mechanism of the device were put forward.Then,irradiation experiments were carried out on devices with different initial data written,and the data reading function and static operating current of the memory under different cumulative doses were measured.[Results&Conclusions]The experimental results obtained by statistics verify the correctness of the hypothesis.The radiation sensitive unit of RRAM is the memory array,and the failure of the RRAM reading function is caused by the leakage current generated by the MOSFET under irradiation,which changes the level output state of the reading circuit.

关 键 词：阻变存储器 总剂量效应 理论分析 辐照试验 失效机理 

分 类 号：TL99[核科学技术—核技术及应用]