Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond  

作　　者：Rui Zhou Cui Yu Chuangjie Zhou Jianchao Guo Zezhao He Yanfeng Wang Feng Qiu Hongxing Wang Shujun Cai Zhihong Feng 

机构地区：[1]Hebei Semiconductor Research Institute,Shijiazhuang 050051,China [2]National Key Laboratory of ASIC,Hebei Semiconductor Research Institute,Shijiazhuang 050051,China [3]School of Electronic and Information Engineering,Xi'an Jiaotong University,Xi'an 710049,China

出　　处：《Journal of Semiconductors》2020年第12期90-93,共4页半导体学报（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China(Grant No.51702296);Excellent Youth Foundation of Hebei Scientific Committee(Grant No.F2019516002).

摘　　要：In this work,we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra,pulsed I–V characteristics analysis,and radio frequency performances measurements.It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density.Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors.This work should be helpful for further performance improvement of the microwave power diamond devices.

关 键 词：DIAMOND TRANSISTOR TRAP DEFECT power density 

分 类 号：TQ163[化学工程—高温制品工业] TN386[电子电信—物理电子学]