不同Si含量掺杂的ZTO薄膜的制备与研究  

Preparation and Study of ZTO Thin Film Doped with Different Si Content

作　　者：戴永喜 杨倩倩[1] 邓金祥[1] 孔乐[1] 刘红梅[1] 杨凯华[1] 王吉有[1] DAI Yong-xi;YANG Qian-qian;DENG Jin-xiang;KONG le;LIU Hong-mei;YANG Kai-hua;WANG Ji-you(College of Applied Sciences,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学应用数理学院,北京100124

出　　处：《真空》2020年第6期23-26,共4页Vacuum

基　　金：北京市自然科学基金资助(NO.4192016)。

摘　　要：本文采用磁控溅射法制备Si元素掺杂的ZnSnO薄膜(SZTO),研究Si元素掺杂对薄膜样品性能的影响。XRD衍射图谱表明,不同Si掺杂含量的薄膜均呈现非晶态。利用原子力显微镜表征薄膜的表面形貌,随着Si含量的增加,薄膜样品的表面粗糙度呈现出单调递增的趋势,Si掺杂使薄膜样品的平整度降低。透射谱测试表明不同Si含量掺杂的SZTO薄膜在可见光波段均具有较高的透射率,利用Si元素掺杂可以提高在可见光范围的透射率,并有效增加ZnSnO(ZTO)薄膜的光学带隙。PL谱测试表明,随着Si掺杂浓度的升高,PL谱的强度呈现出不同程度的增大,且展宽变宽,这表明Si掺杂的ZTO薄膜样品中引入了一些深能级缺陷。In this paper,Si-doped ZnSnO film(SZTO)was prepared by magnetron sputtering.The effect of Si element doping on the properties of the film samples was studied.The XRD diffraction patterns show that the films with different Si doping content are amorphous.The surface morphology of the film was characterized by atomic force microscopy.With the increase of Si content,the surface roughness of the film sample shows a monotonous increasing trend,and Si doping reduces the flatness of the film sample.The transmission spectrum test shows that the SZTO films doped with different Si content have higher transmittance in the visible light range.Doping with Si can improve the transmittance in the visible range and effectively increase the optical band gap of the ZTO film.The PL spectrum test shows that the intensity of the PL spectrum show different degrees of increase with the increase of Si doping concentration,and the broadening becomes wider,which indicates that some deep level defects are introduced into the Si-doped ZTO film samples.

关 键 词：射频磁控溅射 Si掺杂 ZnSnO薄膜 光学禁带宽度 

分 类 号：O469[理学—凝聚态物理] TB43[理学—电子物理学]