掺镓锌镁氧化物透明导电薄膜的光学和电学性能研究(英文)  

Optical and electrical properties of gallium-doped zinc magnesium oxide transparent conductive thin films

作　　者：顾锦华 朱雅 康淮[2] 龙浩[2] GU Jinhua;ZHU Ya;KANG Huai;LONG Hao(Experimental Teaching and Laboratory Management Center, South-Central University for Nationalities, Wuhan 430074, China;College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan 430074, China)

机构地区：[1]中南民族大学实验教学与实验室管理中心,武汉430074 [2]中南民族大学电子信息工程学院,武汉430074

出　　处：《中南民族大学学报（自然科学版）》2020年第6期625-631,共7页Journal of South-Central University for Nationalities：Natural Science Edition

基　　金：湖北省自然科学基金资助项目(2011CDB418)。

摘　　要：采用磁控溅射技术在玻璃衬底上制备了掺镓锌镁氧化物透明导电薄膜,通过霍耳效应仪和紫外-可见分光光度计的测试分析,研究了工作压强对薄膜光学和电学性能的影响.结果表明,所制备薄膜的电光性能与工作压强密切相关.当工作压强为3.6 Pa时,样品的电阻率最低为1.54×10^-3Ω·cm、可见光区平均透过率最高为87.72%、品质因数最大为4.72×10^3Ω^-1·cm^-1,具有最好的光电综合性能.采用外推方法获得了薄膜样品的直接光学能隙,结果显示其数值大于未掺杂的氧化锌.Transparent conducting thin films of gallium-doped zinc magnesium oxide were deposited by magnetron sputtering onto glass substrates.The effects of working pressure on the optical and electrical properties of the deposited films were investigated by ultraviolet-visible spectrophotometer and Hall effect measurement system.The results show that the working pressure significantly affects the electrical and optical characteristics of the deposited films.The sample fabricated at the working pressure of 3.6 Pa possesses the best optoelectrical performance,with the lowest resistivity of 1.54×10^-3Ω·cm,the maximum average visible transmittance of 87.72%and the highest figure of merit of 4.72×10^3Ω^-1·cm^-1.The direct energy gaps were determined by extrapolation method and the obtained values are larger than that of undoped zinc oxide.

关 键 词：掺杂氧化锌 透明导电氧化物 薄膜 磁控溅射 

分 类 号：TM914[电气工程—电力电子与电力传动]