一款毫米波超宽带GaN MMIC低噪声放大器  

A Millimeter-Wave Ultra-Broadband GaN MMIC Low Noise Amplifier

作　　者：刘会东[1] 朱宝石 朱思成[1] 魏洪涛[1] Liu Huidong;Zhu Baoshi;Zhu Sicheng;Wei Hongtao(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2020年第12期931-935,956,共6页Semiconductor Technology

摘　　要：基于0.15μm GaN HEMT工艺,设计并实现了一款超宽带毫米波GaN低噪声放大器(LNA)微波单片集成电路(MMIC)。该放大器采用4级级联结构,其输入和输出端均采用5阶匹配网络,提高了放大器的匹配带宽;由微带线、短截线和电容组成的无电阻输入匹配网络减小了输入热噪声,优化了电路的噪声系数;在级间匹配网络中引入电阻元件,通过降低Q值扩展电路工作带宽。采用SiC衬底0.15μm AlGaN/GaN HEMT工艺进行流片,在片测试结果表明,在频率14~34 GHz时,该LNA的增益为(18±1)dB、噪声系数小于4.5 dB,在频率为39 GHz时1 dB压缩点输出功率为19 dBm,最大输入承受功率为30 dBm,相对工作带宽大于100%。研制的MMIC LNA面积为1.71 mm^2,功耗为1.05 W。Based on 0.15μm GaN HEMT process,a millimeter-wave ultra-broadband GaN monolithic microwave integrated circuit(MMIC)low noise amplifier(LNA)was designed and fabricated.A four-stage cascade structure was adopted in the amplifier,in which a fifth-order matching network was used at input and output ports to expand the matching bandwith.The input thermal noise was reduced and the noise figure of the circuit was optimized by the non-resistance input matching network,which was composed of the microstrip-line,stub-line and capacitor.Some resistance elements were introduced into inter-stage matching networks to lower the Q value and thus to widen the operating bandwidth of the circuit.The LNA was fabricated by using 0.15μm AlGaN/GaN HEMT technology on SiC subsrtate.The on-wafer test results of the LNA show that in the frequency range of 14-34 GHz,the gain is(18±1)dB,the noise figure is less than 4.5 dB,the output power at the 1 dB compression point is 19 dBm at 39 GHz,the maximum allowable input power is 30 dBm,and the relative operating bandwidth is greater than 100%.The area of the MMIC LNA is 1.71 mm^2 and the power consumption is 1.05 W.

关 键 词：低噪声放大器(LNA) 氮化镓(GaN) 微波单片集成电路(MMIC) 毫米波 超宽带 

分 类 号：TN722.3[电子电信—电路与系统]