电化学定域性刻蚀多孔InP光波导  

Electrochemical Localized Etching of Porous InP Optical Waveguide

作　　者：尤明慧[1] 祝煊宇 李雪[1] 董明雪 王勇 曲轶 You Minghui;Zhu Xuanyu;Li Xue;Dong Mingxue;Wang Yong;Qu Yi(College of Information Technology,Jilin Agricultural University,Changchun 130018,China;State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130022,China;College of Physics and Electronic Engineering,Hainan Normal University,Haikou 571158,China)

机构地区：[1]吉林农业大学信息技术学院,长春130018 [2]长春理工大学高功率半导体激光国家重点实验室,长春130022 [3]海南师范大学物理电子工程学院,海口571158

出　　处：《半导体技术》2020年第12期964-968,981,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61864002,61774025);海南省自然科学基金资助项目(2018CXTD336);吉林省科技厅重点攻关资助项目(20180201005SF,20190201181J7);装备预研重点项目(6140414010302);吉林省教育厅项目(JKH20191316KJ)。

摘　　要：采用电子束光刻技术与电化学定域性刻蚀技术制备了多孔InP光波导。使用扫描电子显微镜对电化学定域性刻蚀方法制备的多孔InP进行表征和分析,研究了电流密度、掩模图形和刻蚀时间对定域性刻蚀制备的多孔InP结构的影响。电化学刻蚀过程中,分别利用掩模图形诱导刻蚀方向,改变电流密度调整孔隙大小和深度,改变刻蚀时间控制形成的多孔结构的深度。采用电化学定域性刻蚀与电子束光刻技术相结合,在InP衬底上制备具有光学传输特性的光波导结构。反射率测试结果表明,采用波长900 nm的入射光,多孔结构具有导波模式。使用500μm长的InP多孔结构所制备波导的损耗约为9.92 dB/cm。多孔结构InP光波导在光子集成领域具有较好的应用价值和前景。The porous InP optical waveguide was fabricated using electron beam lithography(EBL)and electrochemical localized etching(ELE)technology.A scanning electron microscope(SEM)was used to characterize and analyze the porous InP prepared by electrochemical localized etching.The inf-luences of current density,mask pattern and etching time on the porous InP structure formed by ELE were studied.During the electrochemical etching process,the mask pattern was used to induce the etching formation direction;the current density was changed to adjust the pore size and depth;the etching time was changed to control the depth of the formed porous structure,respectively.The pattern mask technology with electrochemical localized etching and electron beam lithography were used to fabricate the optical waveguide structure with optical transmission function.The reflectivity test results show that guided mode is achieved from the porous structure with incident light wavelength of 900 nm,the loss of the porous waveguide structure with a length of 500μm is about 9.92 dB/cm.The porous InP optical waveguide has good application value and prospect in the field of photonic integration.

关 键 词：多孔InP 电子束光刻 电化学刻蚀 定域性 波导 

分 类 号：TN304.23[电子电信—物理电子学]