AlGaN基宽禁带半导体光电材料与器件  

AlGaN Based Wide Bandgap Photoelectric Materials and Devices

作　　者：贲建伟 孙晓娟[1,2] 蒋科 陈洋 石芝铭 臧行 张山丽 黎大兵 吕威[3,4] BEN Jianwei;SUN Xiaojuan;JIANG Ke;CHEN Yang;SHI Zhiming;ZANG Hang;ZHANG Shanli;LI Dabing;LYU Wei(Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Changchun University of Technology,Changchun 130012,China)

机构地区：[1]中国科学院长春光学精密机械与物理研究所,长春130033 [2]中国科学院大学,材料与光电研究中心,北京100049 [3]长春工业大学,长春130012 [4]中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,长春130033

出　　处：《人工晶体学报》2020年第11期2046-2067,共22页Journal of Synthetic Crystals

基　　金：国家杰出青年科学基金(61725403);国家重点研发计划(2016YFB0400904);国家自然科学基金面上项目(61874118);苏州纳米所开放课题;发光学及应用国家重点实验室开放课题(SKLA-Z-2020-04)。

摘　　要：AlGaN基材料是带隙可调的直接带隙宽禁带半导体材料,是制备紫外(UV)光电子器件的理想材料。经过数十年的研究,目前已经在异质衬底外延生长AlGaN基材料、高效掺杂等方面取得了巨大进展。以此为基础,AlGaN基紫外光电器件制备领域也得到长足发展。在本综述中,主要介绍了高质量AlGaN基材料的MOCVD外延生长方法、掺杂方法以及近年来在紫外发光、紫外探测器件方面取得的进展。AlGaN based materials are promising to fabricate UV photoelectric devices due to the direct,wide and adjustable bandgap.With decades of research efforts,great progress has been made in improving the quality of AlGaN based materials on heterogeneous substrates,and the doping efficiency has been greatly improved.As a result,great progress has been made on the fabrication of UV photoelectric devices.In this review,the growth methods to obtain high quality AlGaN based materials by metal-organic chemical vapor deposition(MOCVD)and the methods to achieve high doping efficiency are summarized.Moreover,the recent progress of UV LED and UV photodetectors are also introduced.

关 键 词：AlGaN基材料 外延生长 掺杂 紫外发光器件 紫外探测 

分 类 号：O47[理学—半导体物理] TN36[理学—物理]