低功耗、高灵敏的Bi2O2Se光电导探测器  

Bi2O2Se photoconductive detector with low power consumption and high sensitivity

作　　者：李丹阳 韩旭 徐光远 刘筱 赵枭钧 李庚伟 郝会颖 董敬敬 刘昊 邢杰 Li Dan-Yang;Han Xu;Xu Guang-Yuan;Liu Xiao;Zhao Xiao-Jun;Li Geng-Wei;Hao Hui-Ying;Dong Jing-Jing;Liu Hao;Xing Jie(School of Science,China University of Geosciences,Beijing 100083,China)

机构地区：[1]中国地质大学(北京)数理学院,北京100083

出　　处：《物理学报》2020年第24期314-322,共9页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11974318)资助的课题.

摘　　要：窄带隙二维半导体材料Bi2O2Se由于其具有较高的载流子迁移率和优异的热学、化学稳定性,在紫外-可见-近红外光谱区的光电子学领域有着广阔的应用前景.本文通过化学气相沉积法合成了大面积高质量的Bi2O2Se单晶薄膜,讨论了温度对薄膜形貌的影响规律,并在此基础上制备了Bi2O2Se光电导探测器,分别研究了Bi2O2Se在云母基片和氧化硅基片上的光电性能.在532 nm光照下,源漏电压仅为0.5 V时,云母片上的Bi2O2Se薄膜的光电响应度和比探测率高达45800 A/W和2.65×10^12 Jones(1 Jones=1 cm·Hz^1/2·W^–1),相应的光电增益超过105.研究结果表明Bi2O2Se在低功耗、高灵敏度的光电器件中具有优异的探测潜力.With the advent of graphene,atomically thin two-dimensional materials receive great attention in both science and technology.However,the characterization of zero-band gap of graphene hinders its applications in semiconductor logic and memory devices.To make up for the imperfection of graphene,one has made efforts to search for other two-dimensional layered materials.The Bi2O2Se is an emerging material with very high electron mobility,modest bandgap,and excellent thermal and chemical stability.In this work,high-quality Bi2O2Se thin films are synthesized through chemical vapor deposition.The effect of temperature on the morphology and size distribution of Bi2O2Se thin film are discussed in detail experimentally.Under an optimized experimental condition,the Bi2O2Se thin films with a lateral size of 100μm are achieved.Interestingly,Bi2O2Se nanowires are obtained at a lower growth temperature(620–640℃).The photoelectric performances of Bi2O2Se on mica and silicon oxide substrate are examined based on a photoconductive mode.At a small bias of 0.5 V,the responsivity and specific detectivity of the rectangular Bi2O2Se thin film on the mica substrate reach 45800 A/W and 2.65×1012 Jones,respectively,and the corresponding photoelectric gain is greater than 105.The photoelectric performance of our device is comparable to the best results achieved by other research groups,which may be related to the higher quality and appropriate absorption thickness.The Bi2O2Se nanowire and Bi2O2Se thin film transferred to Si/SiO2 by a polystyrene-assisted method also exhibit a good photoresponse under the illumination of a 532 nm laser with a high optical power density(127.4 mW/cm2).The experimental results demonstrate that the Bi2O2Se has great potential applications in the optoelectronic devices with low power consumption and high sensitivity.

关 键 词：二维材料 Bi2O2Se 化学气相沉积 光电导探测器 

分 类 号：TN36[电子电信—物理电子学]