Photoluminescence of green InGaN/GaN MQWs grown on pre-wells  

作　　者：Shou-Qiang Lai Qing-Xuan Li Hao Long Jin-Zhao Wu Lei-Ying Ying Zhi-Wei Zheng Zhi-Ren Qiu and Bao-Ping Zhang 赖寿强;李青璇;龙浩;吴瑾照;应磊莹;郑志威;丘志仁;张保平(School of Electronic Science and Engineering,Xiamen University,Xiamen 361005,China;State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University,Guangzhou 510275,China)

机构地区：[1]School of Electronic Science and Engineering,Xiamen University,Xiamen 361005,China [2]State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University,Guangzhou 510275,China

出　　处：《Chinese Physics B》2020年第12期492-497,共6页中国物理B（英文版）

基　　金：Project supported by the Science Challenge Project,China(Grant No.TZ2016003);National Key Research and Development Program of China(Grant Nos.2016YFB0400803 and 2017YFE0131500);the Fund from the State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University,China。

摘　　要：Photoluminescence(PL)characteristics of the structure consisting of green InGaN/GaN multiple quantum wells(MQWs)and low indium content InGaN/GaN pre-wells are investigated.Several PL peaks from pre-wells and green InGaN/GaN MQWs are observed.The peak energy values for both pre-wells and green InGaN/GaN MQWs display an S-shaped variation with temperature.In addition,the differences in the carrier localization effect,defect density,and phonon-exciton interaction between the pre-wells and green InGaN/GaN MQWs,and the internal quantum efficiency of the sample are studied.The obtained results elucidate the mechanism of the luminescence characteristics of the sample and demonstrate the significant stress blocking effect of pre-wells.

关 键 词：INGAN/GAN PHOTOLUMINESCENCE pre-wells green LED 

分 类 号：TN304[电子电信—物理电子学]