云南高校图书馆联盟文献共享服务平台- INGAN/GAN

INGAN/GAN: 作品数：210被引量：253H指数：7; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：李国强张国义张荣谢自力赵德刚更多>>; 相关机构：中国科学院北京大学华南理工大学南京大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划江苏省自然科学基金更多>>

II-nitride MQW-based optoelectronic sensors for multifunctional environmental monitoring: 《Chip》2024年第4期53-58,共6页Xumin Gao Dongmei Wu Tianlong Xie Jialei Yuan Mingyuan Xie Yongjin Wang Haitao Zhao Gangyi Zhu Zheng Shi; supported by the National Natural Science Foundation of China(62274096);Natural Science Research of Jiangsu Higher Education Institutions of China(22KJA510003);National Natural Science Foundation of China(92367302);Jiangsu Natural Science Foundation for Distinguished Young Scholars(BK20220054).; This work presents an integrated multi-quantum well (MQW)optoelectronic sensor leveraging III-nitride materials for multifunctionality on a monolithic chip. The sensor was fabricated usingstandard microfabrication tec...; 关键词：InGaN/GaN MQW Light-emitting diode PHOTODETECTOR Concentric circle structure Monolithic integration

On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters: 《Chip》2024年第4期59-67,共9页Feifei Qin Xueyao Lu Xiaoxuan Wang Chunxiang Guo Jiaqi Wu Xuefeng Fan Mingming Jiang Peng Wan Junfeng Lu Yongjin Wang Gangyi Zhu; supported by the Natural Science Foundation of Jiangsu Province(No.BK20210593);the National Natural Science Foundation of China(No.62204127);Open Fund of Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education NJ2024001.; Featured with light emission and detection coexistence phenomenon,nitride-based multiple-quantum-well(MQW)diodes integrated chip has been proven to be an attractive structure for application prospects in variousfields...; 关键词：Three-dimensional device Self-warped structures Single cantilever GaN light-emitting diode Directional emission and detection

Realizing Force Sensing with InGaN/GaN Multi-Quantum Well Diode Chip: 《Instrumentation》2024年第4期4-12,共9页Feifei Qin Jiaqi Wu Shun Lu Xueyao Lu Yang Chen Xumin Gao Yue Cao Lei Zhang Xiaoxuan Wang Peng Wan Gangyi Zhu Yongjin Wang; supported by the Natural Science Foundation of Jiangsu Province(BK20210593);the National Natural Science Foundation of China(62204127,62404040);the Fundamental Research Funds for the Central Universities(No.NS2022096).; Force sensing provides a crucial physical-electrical channel within sensing technology.This study showcases the fabrication and characterization of force sensors by integrating a polydimethylsiloxane(PDMS)mechanical m...; 关键词：InGaN/GaN diodes chip force sensing coexistence of light emission and detection PDMS

Concentration sensing system with monolithic InGaN/GaN photonic chips被引量：2: 《Chinese Optics Letters》2024年第6期170-176,共7页Feifei Qin Xueyao Lu Yang Chen Xumin Gao Yue Cao Lei Zhang Junfeng Lu Xiaoxuan Wang Gangyi Zhu Yongjin Wang; supported by the Natural Science Foundation of Jiangsu Province (Nos.BK20210593 and BK20231441);the National Natural Science Foundation of China (No.62204127);the Fundamental Research Funds for the Central Universities (No.NS2022096)。; Using an identical monolithic InGaN/GaN light emitting diode (LED) array as the sensing module and a well-designed data processing module, we demonstrate a small-size concentration sensing prototype. Overlap between t...; 关键词：InGaN/GaN diodes array liquid concentration sensing coexistence of luminescence detection

硅基InGaN/GaN多量子阱微盘器件的发光、探测和数据传输被引量：1: 《发光学报》2024年第6期978-985,共8页秦飞飞卢雪瑶王潇璇吴佳启曹越张蕾樊学峰朱刚毅王永进; 江苏省自然科学青年基金(BK20210593);国家自然科学基金青年基金(62204127)。; 光源和探测器的集成可有效促进轻量化和小型化光电系统的发展,InGaN/GaN多量子阱器件中发光与探测共存现象为收发一体芯片的设计提供了可能。本文采用标准半导体工艺制备了硅片上集成的圆盘形InGaN/GaN多量子阱阵列器件,并对其发光、探...; 关键词：硅基InGaN/GaN 多量子阱器件发光与探测半双工通信

通过诱导载流子的V坑传输提升GaN基绿光LED的空穴注入效率: 《发光学报》2024年第5期800-808,共9页张东皓杨东锴徐畅刘信佑包立君; 国家自然科学基金(62071405)。; 为了提升GaN基多量子阱LED的空穴注入效率,设计了具有不同最后势垒层结构的GaN基多量子阱外延结构,并将其制备为绿光mini-LED发光芯片,利用低温电致发光光谱、电流电压特性测试对其载流子传输机制进行了研究。结果表明,在采用AlGaN或GaN...; 关键词：发光二极管最后势垒层空穴注入 INGAN/GAN多量子阱 V坑

超晶格插入层对InGaN/GaN多量子阱的应变调制作用: 《物理学报》2024年第7期292-299,共8页曹文彧张雅婷魏彦锋朱丽娟徐可颜家圣周书星胡晓东; 湖北省教育厅科研计划(批准号:Q20222607);襄阳市基础研究科技计划(批准号:2022ABH006045);电子制造与封装集成湖北省重点实验室(武汉大学)开放基金(批准号:EMPI2023009);湖北文理学院教学研究项目(批准号:JY2023017);湖北文理学院博士科研启动基金(批准号:2020170367)资助的课题。; 在InGaN/GaN异质结构量子阱内存在巨大的压电极化场,这严重地削弱了量子阱的发光效率.为了减弱量子阱内的压电极化场,通常引入应变调制插入层提升器件的发光性能.为了研究InGaN/GaN超晶格的应变调制效果和机理,实验设计制备了具有n型InG...; 关键词：GAN 多量子阱超晶格应变调制

Efficiency improvement by using metal–insulator‑semiconductor structure in InGaN/GaN micro‑light‑emitting diodes被引量：1: 《Frontiers of Optoelectronics》2024年第1期77-84,共8页Jian Yin David Hwang Hossein Zamani Siboni Ehsanollah Fathi Reza Chaji Dayan Ban; supported by the Natural Sciences and Engineering Research Council of Canada(NSERC),Ontario Centres for Excellence(OCE),Canada,and Canada Foundation of Innovation(CFI),the University of Waterloo.; InGaN/GaN micro-light-emitting diodes(micro-LEDs)with a metal–insulator-semiconductor(MIS)structure on the sidewall are proposed to improve efficiency.In this MIS structure,a sidewall electrode is deposited on the in...; 关键词：Micro-LED GaN EQE improvement MICRO-FABRICATION

Correction:Efficiency improvement by using metal–insulator‑semiconductor structure in InGaN/GaN micro‑light‑emitting diodes: 《Frontiers of Optoelectronics》2024年第1期95-99,共5页Jian Yin David Hwang Hossein Zamani Siboni Ehsanollah Fathi Reza Chaji Dayan Ban; Open Access This article is licensed under a Creative Commons Attribution 4.0 International License,which permits use,sharing,adaptation,distribution and reproduction in any medium or format,as long as you give approp...; 关键词：Efficiency DIODES CREATIVE

Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy: 《Journal of Semiconductors》2024年第1期48-54,共7页Jun Fang Fan Zhang Wenxian Yang Aiqin Tian Jianping Liu Shulong Lu Hui Yang; supported by the National Key Research and Development Program of China (2017YFE0131500, 2022YFB2802801);the National Natural Science Foundation of China (61834008, U21A20493);the Key Research and Development Program of Jiangsu Province (BE2020004, BE2021008-1);the Suzhou Key Laboratory of New-type Laser Display Technology (SZS2022007); The InGaN films and GaN/InGaN/GaN tunnel junctions(TJs)were grown on GaN templates with plasma-assisted molecular beam epitaxy.As the In content increases,the quality of InGaN films grown on GaN templates decreases an...; 关键词：GaN/InGaN/GaN tunnel junctions polarization-engineering molecular beam epitaxy

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

INGAN/GAN

检索结果分析

下载全文

高级检索检索式检索

时间限定

期刊范围

学科限定全选

高级检索 检索式检索

时间限定

期刊范围

学科限定全选

INGAN/GAN

检索结果分析

下载全文

用户登录

高级检索检索式检索