Efficiency improvement by using metal–insulator‑semiconductor structure in InGaN/GaN micro‑light‑emitting diodes  

作　　者：Jian Yin David Hwang Hossein Zamani Siboni Ehsanollah Fathi Reza Chaji Dayan Ban 

机构地区：[1]Department of Electrical and Computer Engineering,Waterloo Institute Nanotechnology,University of Waterloo,Waterloo,ON N2L 3G1,Canada [2]Vuereal InC.,440 Philip Street,Unit 100,Waterloo,ON N2L 5R9,Canada

出　　处：《Frontiers of Optoelectronics》2024年第1期77-84,共8页光电子前沿（英文版）

基　　金：supported by the Natural Sciences and Engineering Research Council of Canada(NSERC),Ontario Centres for Excellence(OCE),Canada,and Canada Foundation of Innovation(CFI),the University of Waterloo.

摘　　要：InGaN/GaN micro-light-emitting diodes(micro-LEDs)with a metal–insulator-semiconductor(MIS)structure on the sidewall are proposed to improve efficiency.In this MIS structure,a sidewall electrode is deposited on the insulating layer-coated sidewall of the device mesa between a cathode on the bottom and an anode on the top.Electroluminescence(EL)measurements of fabricated devices with a mesa diameter of 10μm show that the application of negative biases on the sidewall electrode can increase the device external quantum efficiency(EQE).In contrast,the application of positive biases can decrease the EQE.The band structure analysis reveals that the EQE is impacted because the application of sidewall electric fields manipulates the local surface electron density along the mesa sidewall and thus controls surface Shockley–Read–Hall(SRH)recombination.Two suggested strategies,reducing insulator layer thickness and exploring alternative materials,can be implemented to further improve the EQE of MIS micro-LEDs in future fabrication.

关 键 词：Micro-LED GaN EQE improvement MICRO-FABRICATION 

分 类 号：TN312.8[电子电信—物理电子学]