碲锌镉晶片双面机械化学磨抛分析  

Analysis of Cadmium Zinc Telluride Wafers by Double Side Mechanical Chemical Polishing

作　　者：张文斌[1] 王海明[1] 葛劢翀 ZHANG Wenbin;WANG Haiming;GE Maichong(The 45th Research Institute of CETC,Beijing 100176,China)

机构地区：[1]中国电子科技集团公司第四十五研究所,北京100176

出　　处：《电子工业专用设备》2020年第6期7-9,60,共4页Equipment for Electronic Products Manufacturing

摘　　要：介绍了碲锌镉晶片双面磨抛机的工艺过程和原理,研究了双面磨抛工艺中磨抛液粒度、抛光压力、抛光液流量和工作台转速对晶片表面粗糙度及平整度的影响。The process and principle of the CZT wafer double side lapping and polishing machine are introduced in this paper,the effect of double side lapping and polishing fluid particle size,polishing pressure,polishing fluid flow rate and the chuck rotation speed on the wafer surface roughness are studied.

关 键 词：碲锌镉 双面磨抛 粗糙度 

分 类 号：TN305.2[电子电信—物理电子学]