基于电学法的功率MOSFET器件芯片温升测量方法研究  

The Study on Temperature Rise Measurement Method of Power MOSFET Device Chip based on Electrical Method

作　　者：易晓东 石帮兵 Yi Xiaodong;Shi Bangbing(China Aerospace Standardization Institute,Beijing 100071,China;Beijing University of Technology,Beijing 100124,China)

机构地区：[1]中国航天标准化研究所,北京100071 [2]北京工业大学,北京100124

出　　处：《质量与可靠性》2020年第6期58-62,共5页Quality and Reliability

摘　　要：热性能是功率器件重点关注的对象,热失效已成为影响功率器件可靠性和使用寿命的重要因素。以SiC MOSFET功率器件为试验对象,设计测量电路,研究器件栅极开启延迟时间与芯片温升之间的对应关系,提出一种栅极开启延迟时间作为温敏参数的功率MOSFET器件测温方法,实现了该类器件芯片温度的精确测量。The thermal characteristics of power devices have received great attention,and the thermal failure has become an important factor affecting the reliability and service life of power devices.In this paper,the SiC power device is used as a test object,and the relationship between the turn-on delay time of the grid and the temperature rise of the device chip is deeply studied by designing a measuring circuit.A temperature measurement method of the power MOSFET device based on the turn-on delay of the grid as temperature-sensitivity is proposed,which realizes an accurate temperature measurement of this device chip.

关 键 词：功率MOSFET器件 开启延迟 芯片温度 

分 类 号：TN386.1[电子电信—物理电子学]