基于红外热像仪的微电路模块失效定位方法  

Microcircuit Module Failure Location Method Based on Infrared Thermal Imager

作　　者：冯慧[1] 尹丽晶[2] 范士海[1] FENG Hui;YIN Li-Jing;FAN Shi-hai(Aerosape Science&Industry CORP Defense Technology R&T Cente,Beijing 100854;The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050000)

机构地区：[1]航天科工防御技术研究试验中心,北京100854 [2]中国电子科技集团公司第十三研究所,石家庄050000

出　　处：《环境技术》2020年第6期119-123,共5页Environmental Technology

摘　　要：本文基于红外热成像技术在小型微电路模块中的应用,采取提高温度阈值、半导体制冷降温、合理电激励等方式改善了红外热成像失效定位效果,提升了失效定位效率,对于微电路模块失效分析工作有实践指导意义。This article is based on the application of infrared thermal imaging technology in small microcircuit modules,and adopts methods such as increasing the temperature threshold,semiconductor cooling and reasonable electrical excitation to improve the failure location effect of infrared thermal imaging and improve the failure location efficiency.For microcircuit modules the failure analysis work has practical guiding significance.

关 键 词：微电路模块 红外热成像 失效定位 

分 类 号：TN219[电子电信—物理电子学]