3D NAND中基于SEG高度失效模型的DPPM预测算法  

DPPM Prediction Algorithm Based on SEG Height Failure Model in 3D NAND

作　　者：李治昊 夏志良 许高博[2] 周文犀[3] 霍宗亮 LI Zhihao;XIA Zhiliang;XU Gaobo;ZHOU Wenxi;HUO Zongliang(University of Chinese Academy of Sciences,Beijing 100049,China;Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;Yangtze Memory Technology Co.,Ltd.,Wuhan 430000,China)

机构地区：[1]中国科学院大学,北京100049 [2]中国科学院微电子研究所,北京100029 [3]长江存储科技责任有限公司,湖北武汉430000

出　　处：《电子产品可靠性与环境试验》2020年第6期58-61,共4页Electronic Product Reliability and Environmental Testing

摘　　要：3D NAND中工艺结构是导致器件失效的重要因素之一,其中,选择性外延生长(SEG)的生长高度也是导致失效的一个重要参数。因此,提出了一种新的关于SEG高度引起器件失效的模型、失效概率的计算方法,并由此计算预测每百万缺陷数(DPPM)。该算法涉及多种数学模型如泊松分布、正态分布等,同时对3D NAND中不同层次的失效概率进行计算。根据该算法可以得到DPPM与SEG高度的关系,并对SEG高度最优值、DPPM对不同区域的SEG高度的敏感性进行了研究。The procoss structure in 3D NAND is one of the important factors leading to device failure.Among them,the growth height of SEG is also an important parameter leading to failure.Therefore,a new model of device failure caused by SEG height and a calculation method of failure probability are proposed,and the DPPM is calculated and predicted based on this.The algorithm involves a variety of mathematical models such as poisson distribution,normal distribution and so on.At the same time,the failure probability of different levels in 3D NAND is calculated.The relationship between DPPM and SEG height can be obtained,and the optimum of SEG height and the sensitivity of DPPM to the SEG height in different regions is studied according to the algorithm.

关 键 词：3D NAND 失效概率 选择性外延生长高度 每百万缺陷数 预测算法 

分 类 号：O211.3[理学—概率论与数理统计]