IGCT-MMC中二极管反向恢复特性分析与测试  

Analysis and Test of Reverse Recovery Performance of Fast Recovery Diode in IGCT-MMC

作　　者：娄彦涛 孙小平 刘琦 周文鹏 赵彪[2] 余占清[2] 曾嵘[2] LOU Yantao;SUN Xiaoping;LIU Qi;ZHOU Wenpeng;ZHAO Biao;YU Zhanqing;ZENG Rong(Xi'an XD Power Systems Co.,Ltd.,Xi'an 710065,China;Department of Electrical Engineering,Tsinghua University,Beijing 100084,China)

机构地区：[1]西安西电电力系统有限公司,陕西西安710065 [2]清华大学电机工程与应用电子技术系,北京100084

出　　处：《中国电力》2021年第1期19-24,共6页Electric Power

基　　金：广东省重点领域研发计划资助项目(2019B111109001)。

摘　　要：二极管的反向恢复特性在IGCT-MMC中起着重要的作用。首先介绍快恢复二极管的反向恢复特性,然后在IGCT-MMC拓扑中介绍快恢复二极管的开关行为,最后搭建适用于IGCT-MMC测试的双脉冲实验平台,并对比了3种商业化快恢复二极管产品的反向恢复特性。最终的测试结果表明,快恢复二极管的反向恢复峰值电流和功率与di/dt呈现线性关系,并且在高温下的测试结果要高于常温。而在相同的di/dt和温度条件下,不同的快恢复二极管在IGCT-MMC中反向恢复峰值电流和功率存在差异,在实际应用中需要根据二极管的安全工作区对di/dt进行合理设计。The reverse recovery characteristics of the diode plays an important role in IGCT-MMC.This paper firstly introduces the reverse recovery characteristics of the fast recovery diode.Then the switching behaviors of the fast recovery diode in the IGCTMMC topology are analyzed.Finally a double-pulse experimental platform is built for IGCT-MMC testing,and the reverse recovery characteristics of three commercial fast recovery diode products are compared.The test results show that the reverse recovery peak current and power of the fast recovery diode have a linear relationship with di/dt,and the testing result at high temperature are higher than that at room temperature.While under the same di/dt and temperature conditions,different fast recovery diodes have different reverse recovery peak currents and powers in IGCT-MMC.As a result,it is necessary to choose a suitable di/dt according to the safe working area of the diode in IGCT-MMC.

关 键 词：IGCT-MMC 快恢复二极管 反向恢复峰值电流 反向恢复峰值功率 安全工作区 

分 类 号：TM46[电气工程—电器] TN34[电子电信—物理电子学]