金属辅助化学刻蚀法制备硅纳米线及其工艺参数优化  

Preparation of Silicon Nanowires by Metal-assisted Chemical Etching and Optimization of Process Parameters

作　　者：王波[1] 高灿灿 薛睿 WANG Bo;GAO Cancan;XUE Rui(College of Materials Science and Engineering,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学材料科学与工程学院,北京100124

出　　处：《北京工业大学学报》2021年第2期179-185,共7页Journal of Beijing University of Technology

基　　金：国家自然科学基金资助项目(51571003)。

摘　　要：为了制备形貌良好性能优良的硅纳米线,利用金属辅助化学刻蚀法,在AgNO3和HF的混合水溶液中沉积Ag颗粒,使之作为刻蚀反应的催化剂,并在H2O2和HF的混合溶液中进行刻蚀反应制备硅纳米线.通过改变实验中的工艺参数,包括刻蚀反应时间、刻蚀反应温度、刻蚀液中HF浓度及反应过程中的搅拌速度,用扫描电子显微镜(scanning electron microscope,SEM)图像进行对比分析,讨论制备优良硅纳米线的最佳参数.结果表明:当刻蚀反应时间为1 h,反应温度在室温下,HF浓度为4.8 mol/L时,硅纳米线的表面形貌是最好的,但对刻蚀液的搅拌会严重破坏硅纳米线的表面形貌,不利于优良硅纳米线的制备.To prepare silicon nanowires with good appearance and performance,a metal-assisted chemical etching method was used to deposit Ag particles in the mixed aqueous solution of AgNO3 and HF in this paper,which was used as the catalyst for the etching reaction,and the silicon nanowires were prepared by etching reaction in the mixed solution of H2 O2 and HF.By changing the technological parameters in the experiment,including etch reaction time,etch reaction temperature,HF concentration in etch solution and stirring speed in the reaction process,the optimum parameters for preparing excellent silicon nanowires were discussed by means of SEM image analysis.Results show that when the etching reaction time is 1 hour at room temperature and the HF concentration is 4.8 mol/L,the surface morphology of silicon nanowires is the best.Meanwhile,the agitation of etching solution seriously damages the surface morphology of silicon nanowires,which is not conducive to the preparation of excellent silicon nanowires.

关 键 词：硅纳米线 金属辅助化学刻蚀法 刻蚀反应时间 刻蚀反应温度 HF浓度 搅拌速度 形貌结构 

分 类 号：TB321[一般工业技术—材料科学与工程]