一种新型的高精度迟滞比较器  

A New Hysteresis Comparator with High Precision

作　　者：潘高 伍滔 周泽坤[1] 张波[1] PAN Gao;WU Tao;ZHOU Zekun;ZHANG Bo(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China;Chengdu International Green Chip Microelectronics Technology Co.,Ltd.,Chengdu 610000,P.R.China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [2]成都英特格灵微电子技术有限公司,成都610000

出　　处：《微电子学》2020年第6期789-793,共5页Microelectronics

基　　金：预研项目(41421050401)。

摘　　要：基于0.18μm CMOS工艺,提出了一种补偿电流型高精度迟滞比较器。利用两个工作在线性区的MOS晶体管间的电流差产生一个补偿电流源,将补偿电流源应用于传统内部迟滞比较器中,对迟滞电压中工艺和温度的相关项进行补偿,以获得低温漂的高精度迟滞电压。仿真结果表明,该迟滞电压具有非常低的温度系数,当迟滞电压为149.94 mV、温度从-40℃变化至125℃时,迟滞电压仅变化1.3 mV,变化幅度仅为0.87%。Based on a 0.18 μm CMOS process, a high precision hysteresis comparator with compensation current source(CCS) was proposed. A compensation current source was generated by the current difference between two MOS transistors operating in the linear region, and the CCS was applied in the traditional internal hysteresis comparator to compensate the process and temperature correlation in the hysteresis voltage, so as to obtain the high precision hysteresis voltage of low temperature drift. The simulation results showed that the hysteresis voltage had a very low temperature coefficient. When the hysteresis voltage in typical design was 149.94 mV, the hysteresis voltage only changed 1.3 mV from-40 ℃ to 125 ℃, and the change ratio was only 0.87%.

关 键 词：迟滞比较器 补偿电流源 

分 类 号：TN432[电子电信—微电子学与固体电子学]