MEMS开关中聚合物牺牲层去除方法研究  

Study on Polymeric Sacrificial Layer Etching Strategy for MEMS Switch

作　　者：张翼[1] 鲍景富[1] 黄裕霖[1] 李昕熠[1] 张亭[1] 张晓升[1] ZHANG Yi;BAO Jingfu;HUANG Yulin;LI Xinyi;ZHANG Ting;ZHANG Xiaosheng(School of Electronic Science and Engineering,Univ.of Elec.Sci.and Technol.of China,Chengdu 611731,P.R.China)

机构地区：[1]电子科技大学电子科学与工程学院,成都611731

出　　处：《微电子学》2020年第6期890-893,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61804023);四川省科技计划项目(2018GZ0527)。

摘　　要：制作了一种以聚酰亚胺作为牺牲层的低下拉电压开关,聚酰亚胺牺牲层采用反应离子刻蚀(RIE)工艺进行刻蚀。研究了刻蚀功率对刻蚀时间的影响,检验了不同刻蚀功率与刻蚀时间组合条件下开关梁的结构完整性,优化了该RIE工艺。实验结果表明,聚酰亚胺牺牲层的去除效果较好,其侧向刻蚀率为1.3μm/min。最终获得了具有2μm以下间隙、结构完整的MEMS开关梁。A MEMS switch with low pull-in voltage was fabricated using polyimide as the sacrificial layer. The sacrificial layer was removed by using RIE process. The influence of the etching power on etching time was studied, and the structural integrity of the switch beam was tested under different etching power and etching time combination conditions, so this RIE process was optimized. Experimental results showed that the polyimide sacrificial layer removal effect was good, and the lateral etching rate was 1.3 μm/min. Finally a MEMS switch cantilever beam with sub-2 μm gap and complete structure was obtained.

关 键 词：MEMS开关 聚酰亚胺 反应离子刻蚀 牺牲层释放 

分 类 号：TN405[电子电信—微电子学与固体电子学]