高温及关态应力条件下GaAs pHEMT器件的性能退化研究  

Study on Performance Degradation of GaAs pHEMT Under High Temperature and Off-State Stress

作　　者：化宁 王佳[2] 王茂森 杜祥裕 戴杰 HUA Ning;WANG Jia;WANG Maosen;DU Xiangyu;DAI Jie(Shanghai Institute of Aerospace Electronics Technology,Shanghai 201109,P.R.China;Shanghai Academy of Spaceflight Technology,Shanghai 201109,P.R.China)

机构地区：[1]上海航天电子技术研究所,上海201109 [2]上海航天技术研究院,上海201109

出　　处：《微电子学》2020年第6期932-936,共5页Microelectronics

摘　　要：研究了高温和电学应力下砷化镓赝晶高电子迁移率晶体管的直流特性退化机理。高温下陷阱辅助发射电流引起器件关态漏电上升,而载流子迁移率的退化引起跨导降低;当温度达到450 K时,栅金属的沉降效应会导致跨导异常升高。进一步研究了不同温度下关态电学应力对器件性能退化的影响,结果与高温下栅沉降效应相吻合。The DC characteristics degradation of GaAs pseudomorphic high electron mobility transistors(pHEMT) under high temperature and off-state stress measurement was studied. Poole-Frenkel(PF) emission mechanism dominated the off-state current, causing an increase in leakage current with the increase in temperature, while the decrease in transconductance was induced by a degradation of carrier mobility. It was observed that the peak transconductance of GaAs pHEMT exhibited an abnormal increase at 450 K, which was attributed to the sink effect of gate metal. Off-state stress influence on device was further investigated, resulting in similar gate sink induced degradation to that observed under high temperature.

关 键 词：砷化镓 赝晶高电子迁移率晶体管 高温退化 

分 类 号：TN386[电子电信—物理电子学]