磁控溅射沉积镓掺杂氧化锌薄膜的微观结构性质研究(英文)  

Gallium-incorporated zinc oxide films deposited by magnetron sputtering and its microstructural properties

作　　者：顾锦华 朱雅[3] 康淮 GU Jinhua;ZHU Ya;KANG Huai(Experimental Teaching and Laboratory Management Center,South-Central University for Nationalities,Wuhan 430074,China;Hubei Key Laboratory of Intelligent Wireless Communication,South-Central University for Nationalities,Wuhan 430074,China;College of Electronic Information Engineering,South-Central University for Nationalities,Wuhan 430074,China)

机构地区：[1]中南民族大学实验教学与实验室管理中心,武汉430074 [2]中南民族大学智能无线通信湖北省重点实验室,武汉430074 [3]中南民族大学电子信息工程学院,武汉430074

出　　处：《中南民族大学学报（自然科学版）》2021年第1期57-63,共7页Journal of South-Central University for Nationalities：Natural Science Edition

基　　金：湖北省自然科学基金资助项目(2011CDB418)。

摘　　要：采用磁控溅射工艺在玻璃衬底上沉积镓掺杂氧化物透明导电薄膜样品,通过X-射线衍射仪的测试表征及其定量分析研究了薄膜样品的结晶性质和微观结构性能.结果表明,所沉积的样品均为六角纤锌矿型的多晶结构并具有(002)择优取向生长特性,其晶格常数、晶面间距和Zn-O键长等参数与标准值一致.当膜厚为570 nm时,薄膜样品的(002)织构系数和晶体尺寸最大、晶格应变和位错密度最小,具有最好的晶体质量和微观结构性能.Transparent conductive gallium-doped zinc oxide thin films were deposited by magnetron sputtering technique onto glass substrates.The crystallinity and microstructural properties of the deposited samples were investigated by means of X-ray diffractometer and quantitative analysis.The results show that all the samples are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the(002)direction.The microstructure parameters such as lattice constants,interplanar spacing and Zn-O bond length were determined and the results are in agreement with that of the standard ZnO.When the film thickness is 570 nm,the deposited sample exhibits the best crystal quality and microstructural properties,with the maximum(002)texture coefficient and mean crystal size,and the minimum lattice strain and dislocation density.

关 键 词：磁控溅射 掺杂氧化锌 薄膜 微观结构 

分 类 号：TM914[电气工程—电力电子与电力传动]