GaN HEMTs小信号等效电路建模与参数直接提取  

Modeling and direct extraction of parameters of GaN HEMTs small signal equivalent circuit

作　　者：郑良川 王军[1] ZHENG Liangchuan;WANG Jun(College of Information Engineering,Southwest University of Science and Technology,Mianyang 621010,Sichuan Province,China)

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《电子元件与材料》2021年第1期72-76,共5页Electronic Components And Materials

摘　　要：半导体技术飞速进步,第三代半导体氮化镓(GaN)因其优越的性能近年来受到了广泛的关注与研究。数以万计的氮化镓高电子迁移率晶体管(GaN HEMT)应用于微波和毫米波等领域,成为半导体产业研究的热点。本文在传统的氮化镓高电子迁移率晶体管(GaN HEMTs)小信号等效电路模型的基础上将所建立模型的参数数量提高到20个,提出了一种精确地直接提取模型参数的算法,并通过MATLAB编程计算出模型参数值。最后再将此模型的仿真S参数结果与实验结果相比较,验证了此模型的准确性与方法的可靠性。It is desired to embed precise model of gallium nitride HEMT in computer aided design(CAD)software and use it to design power amplifier control circuit and high frequency power circuit.In this paper,based on the traditional small signal equivalent circuit model of gallium nitride high electron mobility transistor(GaN HEMT),the number of parameters of the model was increased to 20,and an algorithm for extracting model parameters directly and accurately were proposed.Compared with the algorithm and the direct extraction method,this method is simpler and more accurate,and the simulation results of the model were compared with the experimental results to verify the accuracy of the model and the reliability of the method.

关 键 词：GaN HEMTs 小信号等效电路 参数提取 算法 

分 类 号：TN82[电子电信—信息与通信工程] P457.9[天文地球—大气科学及气象学]