铁电全闭合畴结构的稳定性研究  

Study on the stability of flux-closure domains in PbTiO3 multilayered films

作　　者：陈雨亭 朱银莲[1] 宫风辉 邹敏杰 唐云龙 马秀良[1,5] CHEN Yu-ting;ZHU Yin-lian;GONG Feng-hui;ZOU Min-jie;TANG Yun-long;MA Xiu-liang(Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang Liaoning 110016;School of Materials Science and Engineering,University of Science and Technology of China,Shenyang Liaoning 110016;Songshan Lake Materials Laboratory,Dongguan Guangdong 523808;Institute of Physics,Chinese Academy of Sciences,Beijing 100190;State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals,Lanzhou University of Technology,Lanzhou Gansu 730050,China)

机构地区：[1]中国科学院金属研究所沈阳材料科学国家研究中心,辽宁沈阳110016 [2]中国科学技术大学材料科学与工程学院,辽宁沈阳110016 [3]松山湖材料实验室,广东东莞523808 [4]中国科学院物理研究所,北京100190 [5]兰州理工大学有色金属先进加工与循环国家重点实验室,甘肃兰州730050

出　　处：《电子显微学报》2020年第6期635-641,共7页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(Nos.51971223,51671194,51922100).

摘　　要：铁电薄膜中的全闭合畴结构由于在高密度存储器中的潜在应用而受到广泛关注。本文在GdScO3、DyScO3两种衬底上生长了不同中间层的PbTiO3多层膜,利用透射电子显微镜对同一衬底不同中间层、同一中间层不同衬底的PbTiO3多层膜畴组态进行了系统的研究。结果表明,在GdScO3衬底上生长的PbTiO3多层膜,当中间层由SrTiO3更换为GdScO3或DyScO3时,PbTiO3中由“V”型全闭合畴结构变为a1/a2畴。在DyScO3衬底上生长的PbTiO3多层膜,当中间层选用DyScO3时为“H”型全闭合畴、c畴、“V”型全闭合畴共存的状态。本研究完善了对全闭合畴结构稳定条件的认识,有利于其在铁电存储器等方面应用的进一步发展。Flux-closure domains in ferroelectric films have attracted much attention due to the potential applications in high-density memory.In this paper,PbTiO3 multilayered films with different intermediate layers were grown on GdScO3 and DyScO3 substrates,and the domain patterns were investigated by using transmission electric microscopy.It is found that the domain patterns in PbTiO3 films grown on GdScO3 substrates will change from“V”-shaped flux-closure domains toa1/a2 domains,when the intermediate layers are changed from SrTiO3 to GdScO3 or DyScO3.The domain patterns in PbTiO3 of DyScO3/(PbTiO3/DyScO3)4 multilayered films are coexistences of“H”-shaped flux-closure domains,c domains and“V”-shaped flux-closure domains.These results help to further understanding of the stability conditions of the flux-closure domains and contribute to the application of flux-closure domains in ferroelectric memories.

关 键 词：铁电薄膜 全闭合畴结构 透射电子显微镜 PBTIO3 

分 类 号：TG115.215.3[金属学及工艺—物理冶金] O77[金属学及工艺—金属学]