多周期SiGe/Si异质纳米结构薄膜的制备研究  

作　　者：周笔 

机构地区：[1]闽江学院物理与电子信息工程学院,福建福州350108

出　　处：《科技创新与应用》2021年第7期80-82,共3页Technology Innovation and Application

基　　金：福建省科技厅自然科学基金项目(编号:2018J01420)。

摘　　要：文章采用了化学气相沉积与阳极腐蚀结合的方法,成功制备了多层SiGe/Si异质纳米结构薄膜材料,并利用XRD、TEM和SEM等方法对其结构及形貌特性进行表征分析。实验结果表明多层纳米结构面密度达到~2×10~(11)cm~(-2),尺寸为15.6±4.4nm,层厚精确可控。In this paper,multi-layer SiGe/Si hetero-nanostructure thin films were successfully prepared by ultra-high vacuum chemical vapor deposition(UHVCVD)combined with electrochemical anodic etching(ECA),and their structure and morphology were characterized by XRD,TEM and SEM.The experimental results show that the area density of multilayer nanostructures is~2×1011 cm-2,and the layer thickness can be accurately controlled by 15.6±4.4 nm.

关 键 词：多量子阱 纳米结构 硅锗 

分 类 号：TN304[电子电信—物理电子学]