Tracks Formation and Morphology in GaN Induced by Swift Heavy Ions  

作　　者：Hu Peipei Liu Jie Zhai Pengfei Xu Lijun Zeng Jian Zhang Shengxia Li Zongzhen 

机构地区：[1]不详

出　　处：《IMP & HIRFL Annual Report》2019年第1期109-110,共2页中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

摘　　要：GaN single crystals were irradiated by 129Xe and 209Bi ions in the range of 800~2300 MeV,respectively.The samples were studied by transmission and high-resolution electron microscope and Raman spectroscopy to reveal the tracks and defects induced in the samples after the irradiation process.

关 键 词：GAN process. SWIFT 

分 类 号：TN3[电子电信—物理电子学]