SLOC传感器光刻干燥不良的改善  

SLOCImprovement of SLOC sensor photo dry Mura

作　　者：李石雷 刘超强 吴东起 邱靖文 郑晓虎 刘群 李伟 张泽军 LI Shi-lei;LIU Chao-qiang;WU Dong-qi;QIU Jing-wen;ZHENG Xiao-hu;LIU Qun;LI Wei;ZHANG Ze-jun(Chongqing BOE Optoelectronics Technology Co., Ltd., Chongqing 400715, China)

机构地区：[1]重庆京东方光电科技有限公司,重庆400715

出　　处：《液晶与显示》2021年第2期265-271,共7页Chinese Journal of Liquid Crystals and Displays

摘　　要：液晶面板上配单层触控传感器(Single Layer On Cell,SLOC)产品在完成传感器光刻工艺后,在宏观检查机上观察,基板的彩膜倒角侧存在大面积的不良(Mura),测试不良区域与正常区域的关键尺寸(CD)值,不良区域的CD值明显偏大,部分点位超出管控指标;另外,SLOC产品在生产工艺后段模组段缺陷不良高发,缺陷不良平均发生率为2.82%,缺陷不良高发位置与不良和CD偏大区域基本一致,有强相关性。通过旋转涂布等测试以及实际流片观察,锁定造成不良的设备为显影机。由于基板从显影1(DEV#1)进入显影2(DEV#2)时基板流片末端药液干燥导致显影不良,进而引起不良,本文称其为干燥不良。为解决此问题,对基板由DEV#1向DEV#2流片的速度进行软体修改,干燥不良有轻微改善,但未消除;通过在DEV#1腔室内增加二次液切的方式,消除了SLOC产品传感器光刻生产时的干燥不良。SLOC产品的CD均一性由3.3%提升到1.9%,缺陷不良率从改善前的平均2.82%降低到平均0.27%。After the sensor photo process is completed for SLOC products,macro observation shows that there is a large area of Mura on the color filter chamfered side of the substrate.The critical dimension(CD)value of the Mura area and the normal area is tested.The CD value of the Mura area is significantly larger,and some points exceed spec.In addition,the average incidence of Short in the module section of the SLOC product in the production process is 2.82%,and the location of the Short is basically consistent with the larger areas of Mura and CD,and has a strong correlation.Through tests such as spin coating and actual tape-out observation,the device that caused Mura to be locked is the developer.As the substrate from the DEV#1 to the DEV#2 is dried at the end of the substrate,the liquid solution is dried,which leads to poor development,which in turn causes Mura.This article refers to this as dry Mura.In order to solve this problem,the speed of substrate transferd from DEV#1 to DEV#2 is modified by software.The drying Mura is slightly improved but not eliminated.Later,by adding a secondary aqua knife method in the DEV#1 chamber,the dry Mura of SLOC sensor photo is eliminated.The CD uniformity of SLOC products increases from 3.3%to 1.9%,and the short defect rate decreases from an average of 2.82%before improvement to an average of 0.27%.

关 键 词：干燥不良 CD均一性 缺陷不良 显影机 二次液切 

分 类 号：TN141.9[电子电信—物理电子学]