硅基芯片TRL校准件的设计与制作  被引量:1

The Design and Manufacture of TRL Calibration Part for Silicon-based Chip

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作  者:甄建宇[1] 陈娜 ZHEN Jianyu;CHEN Na(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China;China Electronics Import and Export Co.,Ltd.,Beijing 100036,China)

机构地区:[1]中国电子科技集团公司第十三研究所,河北石家庄050051 [2]中国电子进出口有限公司,北京100036

出  处:《现代信息科技》2020年第20期23-25,30,共4页Modern Information Technology

摘  要:为了满足在K/Ka频带下设计硅基芯片电路时对器件模型精确测试的要求,文章分析了实现精确校准的硅基芯片TRL校准技术。根据TRL校准原理设计并制作了相应的校准件,用去嵌入的方式提取了片上电感、电容模型。在20 GHz~ 30 GHz高频应用中,验证了模型的准确性。实际测试结果表明该校准件达到了预期效果,仿真值与实测值拟合一致性好。In order to meet the requirements for precise testing of device models when designing silicon-based chip circuits in the K/Ka band,the article analyzes the TRL calibration technology of silicon-based chips that can achieve precise calibration.According to the TRL calibration principle,the corresponding calibration part was designed and manufactured,the inductance and capacitance models on chip were extracted by means of de-embedding.In 20 GHz^30 GHz high frequency applications,the accuracy of the models was verified.Measurement results show that the calibration part achieved the desired results,the simulated value and the measured value are in good agreement.

关 键 词:硅基芯片 TRL校准技术 去嵌入 

分 类 号:TN386[电子电信—物理电子学]

 

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