悬空氧化铟纳米线晶体管制备与光电性能表征  

Fabrication and optoelectronic characterization of suspended In_(2)O_(3) nanowire transistors

作　　者：姜亦杨 陈艳 王旭东[2] 赵东洋 林铁[2] 沈宏[2] 孟祥建[2] 汪琳[1] 王建禄[2] JIANG Yi-yang;CHEN Yan;WANG Xu-dong;ZHAO Dong-yang;LIN Tie;SHEN Hong;MENG Xiang-jian;WANG Lin;WANG Jian-lu(School of Materials Science&Engineering,Shanghai University,Shanghai 200444,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]上海大学材料科学与工程学院,上海200444 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《中国光学》2021年第1期196-205,共10页Chinese Optics

基　　金：国家自然科学基金项目(No.61521001,No.61574151);国家重点基础研究发展规划项目(No.2016YFA0203900,No.2016YFB0400801);中国科学院重点资助项目(No.QYZDB-SSW-JSC016,No.QYZDY-SSW-JSC042)。

摘　　要：一维(1D)半导体纳米线在纳米电子学和纳米光子学中表现出色。然而,纳米线晶体管的电特性对纳米线与衬底之间的相互作用非常敏感,而优化器件结构可以改善纳米线晶体管的电学和光电检测性能。本文报道了通过一步式光刻技术制造的悬浮式In_(2)O_(3)纳米线晶体管,显示出54.6 cm^(2)V^(−1)s^(−1)的高迁移率和241.5 mVdec^(−1)的低亚阈值摆幅。作为紫外光电探测器,光电晶体管显示出极低的暗电流(~10−13 A)和高响应度1.6×10^(5) A•W^(−1)。悬浮晶体管的沟道材料的这种简单而有效的制备方法可广泛用于制造高性能微纳米器件。One-dimensional(1D)semiconductor nanowires have shown outstanding performance in nanoelectronics and nano-photonics.However,the electrical properties of the nanowire transistors are very sensitive to interactions between the nanowires and substrates.Optimizing the device structure can improve the electrical and photodetection performance of nanowire transistors.We report a suspended In_(2)O_(3) nanowire transistor fabricated by one-step lithography,showing a high mobility of 54.6 cm^(2)V^(−1)s^(−1) and a low subthreshold swing of 241.5 mVdec^(−1).As an ultraviolet photodetector,the phototransistor shows an extremely low dark current(~10−13 A)and a high responsivity of 1.6×10^(5) A•W^(−1).This simple and effective method of suspending the channel material of a transistor can be widely used in manufacturing high-performance micronano devices.

关 键 词：纳米线 In_(2)O_(3) 悬空器件 紫外探测器 

分 类 号：O472.8[理学—半导体物理] O472.4[理学—物理]