石英坩埚对大直径直拉硅单晶生长的影响  

Effects of Quartz Crucible on Growth of Large Diameter Czochralski Silicon

作　　者：莫宇[1] 张颖武[1] 韩焕鹏[1] 赵堃 李明佳 MO Yu;ZHANG Yingwu;HAN Huanpeng;ZHAO Kun;LI Mingjia(The 46th Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工艺技术》2021年第1期46-49,共4页Electronics Process Technology

摘　　要：大直径的单晶硅生长需要更多的时间和资源,提高单晶成晶率非常重要,石英坩埚是影响单晶产量和质量的主要因素。研究了两种不同内涂层的石英坩埚,一种是内层为高纯合成石英砂的坩埚(SQC),另一种是内层涂抹了碱土金属钡的离子溶液的天然石英砂的坩埚(NQC)。使用两种石英坩埚长时间生长大直径(350 mm)单晶后,通过金相显微镜对两种石英坩埚表面形态进行了观察,并使用粗糙度测试仪对其粗糙度进行了测试,同时使用ICP-MS测试了生长出的晶体的金属浓度。结果表明,使用NQC有较多杂质颗粒进入到硅熔体中,对单晶的无位错生长和单晶质量造成了影响,而使用SQC可减少杂质颗粒进入到硅熔体。The growth of large diameter Czochralski Silicon needs much time and resources,so it is very important to improve the crystallization rate of single crystal.Quartz crucible is the main factor affecting the yield and quality of single crystal.Two different Inner coatings of natural quartz crucibles,one with synthetic quartz(SQC)and the other one with Ba coating(NQC),are researched.After growing large diameter(350 mm)single crystals with two kinds of quartz crucibles for a long time,the surface morphology of the two kinds of quartz crucibles is observed by metallographic microscope.Their roughness is tested by roughness tester and the metal concentration of the grown crystals is measured by ICP-MS at the same time.The results show that many impurity particles enter the silicon melt by NQC,which affects the dislocation-free growth and quality of single crystals,while the use of SQC can reduce the impurity particles into the silicon melt.

关 键 词：石英坩埚 无位错 直拉硅单晶 粗糙度 金属浓度 

分 类 号：TN304.1[电子电信—物理电子学]