CuS/ZnS/ITO透明忆阻器的制备及其突触性能  

CuS/ZnS/ITO Transparent Memristor and Its Synaptic Behavior

作　　者：陈炜东 骆军[1] 曹鸿涛[2] 梁凌燕[2] 张洪亮[2] 张莉 诸葛飞[2] CHEN Weidong;LUO Jun;CAO Hongtao;LIANG Lingyan;ZHANG Hongliang;ZHANG Li;ZHUGE Fei(Institute of Materials Science,School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China;Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China)

机构地区：[1]上海大学材料科学与工程学院,上海200072 [2]中国科学院宁波材料技术与工程研究所,浙江宁波315201

出　　处：《材料科学与工程学报》2021年第1期30-34,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(61674156,61874125,51702336);浙江省自然科学基金资助项目(LD19E020001);宁波市自然科学基金资助项目(2018A610019)。

摘　　要：忆阻器突触可用于构建神经形态系统,进行类脑计算,而透明突触器件则有利于光电协同调控。本研究首次采用CuS薄膜作为电极,构筑了CuS/ZnS/ITO透明忆阻器,器件表现出稳定的忆阻性能与良好的均一性,在可见光范围内透过率高达82%。通过与Cu制电极的器件比较,采用CuS制电极可以抑制Cu离子向ZnS介质层中大量迁移,有利于提高器件稳定性。在此基础上,通过施加不同形式的电脉冲信号,可以调节忆阻器件的阻态,实现突触可塑性模拟。CuS/ZnS/ITO器件在未来透明神经形态器件领域具有重要的应用价值。Memristive synapses can be used to construct neuromorphic systems for brain-inspired computing.T ransparent synaptic devices are favorable for the coordinate regulation of the device performance by electrical and optical stimuli.CuS films were first used to fabricate transparent CuS/ZnS/ITO memristors,which exhibit stable memristive performance and good uniformity with a transmittance of 82%in the visible range.Compared with Cu,the utilization of CuS as the electrode can prevent from a large number of Cu ions migrating into the ZnS dielectric layer,which is beneficial to improve the device stability.In addition,multi-level resistance states of the memristive device can be achieved by applying different forms of electrical pulse signals.Then synaptic plasticity can be simulated.CuS/ZnS/ITO device has promising applications in the field of transparent neuromorphic devices in future.

关 键 词：忆阻器 透明 突触 CUS 

分 类 号：TN804[电子电信—信息与通信工程]